Literature DB >> 28165195

Direct Observation of Dual-Filament Switching Behaviors in Ta2 O5 -Based Memristors.

Chia-Fu Chang1, Jui-Yuan Chen1, Chun-Wei Huang1, Chung-Hua Chiu1, Ting-Yi Lin1, Ping-Hung Yeh2, Wen-Wei Wu1.   

Abstract

The Forming phenomenon is observed via in situ transmission electron microscopy in the Ag/Ta2 O5 /Pt system. The device is switched to a low-resistance state as the dual filament is connected to the electrodes. The results of energy dispersive spectrometer and electron energy loss spectroscopy analyses demonstrate that the filament is composed by a stack of oxygen vacancies and Ag metal.
© 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Entities:  

Keywords:  RRAM; Ta2O5; dual filaments; hydroxide; in situ TEM; memristors

Year:  2017        PMID： 28165195     DOI： 10.1002/smll.201603116

Source DB:  PubMed          Journal:  Small        ISSN： 1613-6810            Impact factor:   13.281


  3 in total

1.  Improved Environment Stability of Y2O3 RRAM Devices with Au Passivated Ag Top Electrodes.

Authors:  Hae-In Kim; Taehun Lee; Won-Yong Lee; Kyoungdu Kim; Jin-Hyuk Bae; In-Man Kang; Sin-Hyung Lee; Kwangeun Kim; Jaewon Jang
Journal:  Materials (Basel)       Date:  2022-10-02       Impact factor: 3.748

2.  Understanding memristive switching via in situ characterization and device modeling.

Authors:  Wen Sun; Bin Gao; Miaofang Chi; Qiangfei Xia; J Joshua Yang; He Qian; Huaqiang Wu
Journal:  Nat Commun       Date:  2019-08-01       Impact factor: 14.919

3.  Water-Mediated Ionic Migration in Memristive Nanowires with a Tunable Resistive Switching Mechanism.

Authors:  Gianluca Milano; Federico Raffone; Michael Luebben; Luca Boarino; Giancarlo Cicero; Ilia Valov; Carlo Ricciardi
Journal:  ACS Appl Mater Interfaces       Date:  2020-10-14       Impact factor: 9.229
  3 in total

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