Porous GaN electrode for anodic stripping voltammetry of silver(I).

Here we demonstrate porous GaN electrode can be applied for trace Ag(I) detection. Compared to traditional planar electrodes, porous GaN electrode can detect lower concentration of Ag(I) as it possesses more deposition sites (crystal defects) and larger surface area. Under the optimum conditions, porous GaN electrode shows a linear voltammetric response in the Ag(I) concentration range from 1 to 100ppb with the detection limit of 0.5ppb. Such an unmodified, high-porosity and chemically stable electrode is promising to operate in real samples.