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Literature DB >> 28151565

High-Mobility Multilayered MoS₂ Flakes with Low Contact Resistance Grown by Chemical Vapor Deposition.

Jingying Zheng¹, Xingxu Yan², Zhixing Lu¹, Hailong Qiu¹, Guanchen Xu¹, Xu Zhou³, Peng Wang², Xiaoqing Pan^2,4,5, Kaihui Liu³, Liying Jiao¹.

Abstract

The controlled synthesis of high-quality multilayer (ML) MoS2 flakes with gradually shrinking basal planes by chemical vapor deposition (CVD) is demonstrated. These CVD-grown ML MoS2 flakes exhibit much higher mobility and current density than mechanically exfoliated ML flakes due to the reduced contact resistance which mainly resulted from direct contact between the lower MoS2 layers and electrodes.

Entities: Chemical Disease

Keywords: MoS2; chemical vapor deposition; field-effect transistors; mobility; multilayer

Year: 2017 PMID： 28151565 DOI： 10.1002/adma.201604540

Source DB: PubMed Journal: Adv Mater ISSN： 0935-9648 Impact factor: 30.849

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Cited

15 in total

1. Simple eco-friendly synthesis of the surfactant free SnS nanocrystal toward the photoelectrochemical cell application.

Authors: Xiaoguang Huang; Heechul Woo; Peinian Wu; Hyo Jin Hong; Wan Gil Jung; Bong-Joong Kim; Jean-Charles Vanel; Jin Woo Choi
Journal: Sci Rep Date: 2017-11-28 Impact factor: 4.379

2. Scalable high performance radio frequency electronics based on large domain bilayer MoS₂.

Authors: Qingguo Gao; Zhenfeng Zhang; Xiaole Xu; Jian Song; Xuefei Li; Yanqing Wu
Journal: Nat Commun Date: 2018-11-14 Impact factor: 14.919

3. Control of the Nucleation Density of Molybdenum Disulfide in Large-Scale Synthesis Using Chemical Vapor Deposition.

Authors: Haitao Xu; Weipeng Zhou; Xiaowu Zheng; Jiayao Huang; Xiliang Feng; Li Ye; Guanjin Xu; Fang Lin
Journal: Materials (Basel) Date: 2018-05-23 Impact factor: 3.623

4. Transition metal dichalcogenides bilayer single crystals by reverse-flow chemical vapor epitaxy.

Authors: Xiumei Zhang; Haiyan Nan; Shaoqing Xiao; Xi Wan; Xiaofeng Gu; Aijun Du; Zhenhua Ni; Kostya Ken Ostrikov
Journal: Nat Commun Date: 2019-02-05 Impact factor: 14.919

5. Beating the exclusion rule against the coexistence of robust luminescence and ferromagnetism in chalcogenide monolayers.

Authors: Hengli Duan; Peng Guo; Chao Wang; Hao Tan; Wei Hu; Wensheng Yan; Chao Ma; Liang Cai; Li Song; Wenhua Zhang; Zhihu Sun; Linjun Wang; Wenbo Zhao; Yuewei Yin; Xiaoguang Li; Shiqiang Wei
Journal: Nat Commun Date: 2019-04-05 Impact factor: 14.919

High-Mobility Multilayered MoS₂ Flakes with Low Contact Resistance Grown by Chemical Vapor Deposition.

1. Simple eco-friendly synthesis of the surfactant free SnS nanocrystal toward the photoelectrochemical cell application.

2. Scalable high performance radio frequency electronics based on large domain bilayer MoS₂.

3. Control of the Nucleation Density of Molybdenum Disulfide in Large-Scale Synthesis Using Chemical Vapor Deposition.

4. Transition metal dichalcogenides bilayer single crystals by reverse-flow chemical vapor epitaxy.

5. Beating the exclusion rule against the coexistence of robust luminescence and ferromagnetism in chalcogenide monolayers.

6. A Horizontal-Gate Monolayer MoS₂ Transistor Based on Image Force Barrier Reduction.

7. The Large-Scale Preparation and Optical Properties of MoS₂/WS₂ Vertical Hetero-Junction.

8. Surface Charge Transfer Doping of MoS₂ Monolayer by Molecules with Aggregation-Induced Emission Effect.

9. Highly Sensitive NO₂ Detection by TVS-Grown Multilayer MoS₂ Films.

10. Morphology-induced spectral modification of self-assembled WS₂ pyramids.