| Literature DB >> 28144509 |
Stefan Kolenda1, Peter Machon2, Detlef Beckmann1, Wolfgang Belzig2.
Abstract
Background: Thermoelectric effects result from the coupling of charge and heat transport and can be used for thermometry, cooling and harvesting of thermal energy. The microscopic origin of thermoelectric effects is a broken electron-hole symmetry, which is usually quite small in metal structures. In addition, thermoelectric effects decrease towards low temperatures, which usually makes them vanishingly small in metal nanostructures in the sub-Kelvin regime.Entities:
Keywords: spintronics, superconductor-ferromagnet hybrids, thermoelectricity
Year: 2016 PMID: 28144509 PMCID: PMC5238697 DOI: 10.3762/bjnano.7.152
Source DB: PubMed Journal: Beilstein J Nanotechnol ISSN: 2190-4286 Impact factor: 3.649
Figure 1(a) False-color scanning electron microscopy image of one of our samples, together with the measurement scheme. The samples consist of a six-probe tunnel junction between a superconducting aluminum (Al) and a ferromagnetic (Fe) wire, with an overlaid copper (Cu) wire providing additional measurement leads. (b) Scheme of the generation of the linear thermoelectric effect in a FIS junction. (c) Scheme of the generation of the nonlinear thermoelectric effect in a NIS (or FIS) junction.
Figure 2(a) Thermoelectric current Ith as a function of thermal excitation amplitude δT for different magnetic fields B (sample FIS1). Lines are fits of Equation 1 to the data. (b) Thermoelectric transport coefficient η normalized to GTΔ0/e corresponding to the data in panel (a) Lines are the same fits as in (a). (c) N = (N↑ − N↓)/2 as a function of applied field B and energy E. Vertical lines indicate the applied fields B for the data in panels (a) and (b).
Figure 3Thermoelectric transport coefficient η normalized to GTΔ0/e as a function of bias voltage V for different applied magnetic field B. (a) Data for a ferromagnetic junction (sample FIS2). (b) Data for a nonmagnetic junction (sample NIS). (c) Data at V = 0 for both samples as a function of normalized applied field B/Bc.
Figure 4(a) Normalized cooling power Ie2/GTΔ02 as a function of normalized bias voltage eV/Δ0 for different magnetic fields B. (b) Predicted cooling power for the same device assuming P = 0 (NIS cooler) and P = 1 (ideal FIS Peltier cooler) as a function of normalized bias voltage. (c) Predicted coefficient of performance as a function of normalized cooling power for the same parameters as panel (b) and V < 0.