| Literature DB >> 28139872 |
Hung Chia Wang1, Heng Zhang2, Hao Yue Chen3, Han Cheng Yeh4, Mei Rurng Tseng4, Ren Jei Chung3, Shuming Chen2, Ru Shi Liu1,5.
Abstract
Cadmium-free thick-shelled InP/ZnSeS/ZnS quantum dot (QD) was synthesized using the heating-up approach. This quantum dots was used in inverted quantum dots light emitting diode (QLED) devices. The brightness of the inverted QLED device can reach a brightness of over 10 000 cd m-2 , low turn-on voltage (2.2 V), and high power efficiency (4.32 lm W-1 ).Entities:
Keywords: Cd-free quantum dots; backlight; inverted light-emitting diodes; thermal stability; thick-shelled quantum dots
Year: 2017 PMID: 28139872 DOI: 10.1002/smll.201603962
Source DB: PubMed Journal: Small ISSN: 1613-6810 Impact factor: 13.281