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Literature DB >> 28134458

Anatomy of Ag/Hafnia-Based Selectors with 10¹⁰ Nonlinearity.

Rivu Midya¹, Zhongrui Wang¹, Jiaming Zhang², Sergey E Savel'ev³, Can Li¹, Mingyi Rao¹, Moon Hyung Jang¹, Saumil Joshi¹, Hao Jiang¹, Peng Lin¹, Kate Norris², Ning Ge², Qing Wu⁴, Mark Barnell⁴, Zhiyong Li², Huolin L Xin⁵, R Stanley Williams², Qiangfei Xia¹, J Joshua Yang¹.

Abstract

A novel Ag/oxide-based threshold switching device with attractive features including ≈1010 nonlinearity is developed. High-resolution transmission electron microscopic analysis of the nanoscale crosspoint device suggests that elongation of an Ag nanoparticle under voltage bias followed by spontaneous reformation of a more spherical shape after power off is responsible for the observed threshold switching.

Entities: Chemical

Keywords: memory; memristor nonlinearity; neuromorphic computing; selector

Year: 2017 PMID： 28134458 DOI： 10.1002/adma.201604457

Source DB: PubMed Journal: Adv Mater ISSN： 0935-9648 Impact factor: 30.849

Keyword Cloud
Cited

19 in total

1. Addressable Direct-Write Nanoscale Filament Formation and Dissolution by Nanoparticle-Mediated Bipolar Electrochemistry.

Authors: Garrison M Crouch; Donghoon Han; Susan K Fullerton-Shirey; David B Go; Paul W Bohn
Journal: ACS Nano Date: 2017-05-04 Impact factor: 15.881

2. Reconfigurable halide perovskite nanocrystal memristors for neuromorphic computing.

Authors: Rohit Abraham John; Yiğit Demirağ; Yevhen Shynkarenko; Yuliia Berezovska; Natacha Ohannessian; Melika Payvand; Peng Zeng; Maryna I Bodnarchuk; Frank Krumeich; Gökhan Kara; Ivan Shorubalko; Manu V Nair; Graham A Cooke; Thomas Lippert; Giacomo Indiveri; Maksym V Kovalenko
Journal: Nat Commun Date: 2022-04-19 Impact factor: 17.694

3. Three-dimensional crossbar arrays of self-rectifying Si/SiO₂/Si memristors.

Authors: Can Li; Lili Han; Hao Jiang; Moon-Hyung Jang; Peng Lin; Qing Wu; Mark Barnell; J Joshua Yang; Huolin L Xin; Qiangfei Xia
Journal: Nat Commun Date: 2017-06-05 Impact factor: 14.919

4. Capacitive neural network with neuro-transistors.

Authors: Zhongrui Wang; Mingyi Rao; Jin-Woo Han; Jiaming Zhang; Peng Lin; Yunning Li; Can Li; Wenhao Song; Shiva Asapu; Rivu Midya; Ye Zhuo; Hao Jiang; Jung Ho Yoon; Navnidhi Kumar Upadhyay; Saumil Joshi; Miao Hu; John Paul Strachan; Mark Barnell; Qing Wu; Huaqiang Wu; Qinru Qiu; R Stanley Williams; Qiangfei Xia; J Joshua Yang
Journal: Nat Commun Date: 2018-08-10 Impact factor: 14.919

Anatomy of Ag/Hafnia-Based Selectors with 10¹⁰ Nonlinearity.

1. Addressable Direct-Write Nanoscale Filament Formation and Dissolution by Nanoparticle-Mediated Bipolar Electrochemistry.

2. Reconfigurable halide perovskite nanocrystal memristors for neuromorphic computing.

3. Three-dimensional crossbar arrays of self-rectifying Si/SiO₂/Si memristors.

4. Capacitive neural network with neuro-transistors.

5. Surface diffusion-limited lifetime of silver and copper nanofilaments in resistive switching devices.

6. Effect of Ag Concentration Dispersed in HfO_x Thin Films on Threshold Switching.

7. Post-Moore Memory Technology: Sneak Path Current (SPC) Phenomena on RRAM Crossbar Array and Solutions.

8. An artificial nociceptor based on a diffusive memristor.

9. A novel true random number generator based on a stochastic diffusive memristor.

10. Ultrahigh drive current and large selectivity in GeS selector.