Literature DB >> 28124715

Valley splitting in the transition-metal dichalcogenide monolayer via atom adsorption.

Xiaofang Chen1, Liangshuai Zhong1, Xiao Li2, Jingshan Qi1.   

Abstract

In this letter we study the valley degeneracy splitting of the transition-metal dichalcogenide monolayer by first-principles calculations. The local magnetic moments are introduced into the system when the transition-metal atoms are adsorbed on the monolayer surface. The Zeeman effect arising from the local magnetic moment at transition-metal atom sites lifts the valley degeneracy. Anomalous charge, spin and valley Hall effects can be accessed due to valley splitting when we can only excite carriers of one valley. The valley splitting depends on the direction of magnetization and thus can be tuned continuously by an external magnetic field. This tunable valley splitting offers a practical avenue for exploring device paradigms based on the spin and valley degrees of freedom.

Entities:  

Year:  2017        PMID: 28124715     DOI: 10.1039/c6nr05710a

Source DB:  PubMed          Journal:  Nanoscale        ISSN: 2040-3364            Impact factor:   7.790


  3 in total

1.  Out-of-plane carrier spin in transition-metal dichalcogenides under electric current.

Authors:  Xiao Li; Hua Chen; Qian Niu
Journal:  Proc Natl Acad Sci U S A       Date:  2020-07-07       Impact factor: 11.205

2.  Superior Electronic Structure in Two-Dimensional MnPSe 3 /MoS2 van der Waals Heterostructures.

Authors:  Qi Pei; Yan Song; Xiaocha Wang; Jijun Zou; Wenbo Mi
Journal:  Sci Rep       Date:  2017-08-25       Impact factor: 4.379

3.  Coexistence of valley polarization and Chern insulating states in MoS2 monolayers with n-p codoping.

Authors:  Xinyuan Wei; Jiayong Zhang; Bao Zhao; Zhongqin Yang
Journal:  Sci Rep       Date:  2020-06-17       Impact factor: 4.379

  3 in total

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