| Literature DB >> 28112954 |
Yuanju Qu1,2, Mingyang Yang1,3, Jianwei Chai4, Zhe Tang5, Mengmeng Shao1, Chi Tat Kwok1,2, Ming Yang4, Zhenyu Wang3, Daniel Chua5, Shijie Wang4, Zhouguang Lu3, Hui Pan1.
Abstract
Ni3S2 nanowire arrays doped with vanadium(V) are directly grown on nickel foam by a facile one-step hydrothermal method. It is found that the doping can promote the formation of Ni3S2 nanowires at a low temperature. The doped nanowires show excellent electrocatalytic performance toward hydrogen evolution reaction (HER), and outperform pure Ni3S2 and other Ni3S2-based compounds. The stability test shows that the performance of V-doped Ni3S2 nanowires is improved and stabilized after thousands of linear sweep voltammetry test. The onset potential of V-doped Ni3S2 nanowire can be as low as 39 mV, which is comparable to platinum. The nanowire has an overpotential of 68 mV at 10 mA cm-2, a relatively low Tafel slope of 112 mV dec-1, good stability and high Faradaic efficiency. First-principles calculations show that the V-doping in Ni3S2 extremely enhances the free carrier density near the Fermi level, resulting in much improved catalytic activities. We expect that the doping can be an effective way to enhance the catalytic performance of metal disulfides in hydrogen evolution reaction and V-doped Ni3S2 nanowire is one of the most promising electrocatalysts for hydrogen production.Entities:
Keywords: doping; electrocatalyst; first-principles calculation; hydrogen evolution reaction; transition metal sulfide; water-splitting
Year: 2017 PMID: 28112954 DOI: 10.1021/acsami.6b13244
Source DB: PubMed Journal: ACS Appl Mater Interfaces ISSN: 1944-8244 Impact factor: 9.229