Literature DB >> 28092134

Reversible Formation of 2D Electron Gas at the LaFeO3 /SrTiO3 Interface via Control of Oxygen Vacancies.

Pengfa Xu1, Wei Han1, Philip M Rice1, Jaewoo Jeong1, Mahesh G Samant1, Katayoon Mohseni2, Holger L Meyerheim2, Sergey Ostanin2, Igor V Maznichenko3, Ingrid Mertig2,3, Eberhard K U Gross2, Arthur Ernst2, Stuart S P Parkin1,2.   

Abstract

A conducting 2D electron gas (2DEG) is formed at the interface between epitaxial LaFeO3 layers >3 unit cells thick and the surface of SrTiO3 single crystals. The 2DEG is exquisitely sensitive to cation intermixing and oxygen nonstoichiometry. It is shown that the latter thus allows the controllable formation of the 2DEG via ionic liquid gating, thereby forming a nonvolatile switch.
© 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Entities:  

Keywords:  2D electron gas; first principle calculation; ionic liquid gating; lanthanum ferrite; oxygen vacancy control

Year:  2017        PMID: 28092134     DOI: 10.1002/adma.201604447

Source DB:  PubMed          Journal:  Adv Mater        ISSN: 0935-9648            Impact factor:   30.849


  1 in total

1.  An Oxygen Vacancy Memristor Ruled by Electron Correlations.

Authors:  Vincent Humbert; Ralph El Hage; Guillaume Krieger; Gabriel Sanchez-Santolino; Anke Sander; Sophie Collin; Juan Trastoy; Javier Briatico; Jacobo Santamaria; Daniele Preziosi; Javier E Villegas
Journal:  Adv Sci (Weinh)       Date:  2022-07-28       Impact factor: 17.521

  1 in total

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