| Literature DB >> 28059186 |
Joan Manel Ramirez, Vladyslav Vakarin, Clement Gilles, Jacopo Frigerio, Andrea Ballabio, Papichaya Chaisakul, Xavier Le Roux, Carlos Alonso-Ramos, Gregory Maisons, Laurent Vivien, Mathieu Carras, Giovanni Isella, Delphine Marris-Morini.
Abstract
We demonstrate low-loss Ge-rich Si<sub>0.2</sub>Ge<sub>0.8</sub> waveguides on Si<sub>1-x</sub>Ge<sub>x</sub> (x from 0 to 0.79) graded substrates operating in the mid-infrared wavelength range at λ=4.6 μm. Propagation losses as low as (1.5±0.5)dB/cm and (2±0.5)dB/cm were measured for the quasi-TE and quasi-TM polarizations, respectively. A total coupling loss (input/output) of only 10 dB was found for waveguide widths larger than 7 μm due to a good fiber-waveguide mode matching. Near-field optical mode profiles measured at the output waveguide facet allowed us to inspect the optical mode and precisely measure the modal effective area of each waveguide providing a good correlation between experiments and simulations. These results put forward the potential of low-index-contrast Si<sub>1-x</sub>Ge<sub>x</sub> waveguides with high Ge concentration as fundamental blocks for mid-infrared photonic integrated circuits.Year: 2017 PMID： 28059186 DOI： 10.1364/OL.42.000105
Source DB: PubMed Journal: Opt Lett ISSN： 0146-9592 Impact factor: 3.776