| Literature DB >> 28054481 |
Jie Zhang1, Xiaolin Liu1, Yanwei Wen1, Lu Shi1, Rong Chen2, Huijun Liu3, Bin Shan1.
Abstract
Good electronic transport capacity and low lattice thermal conductivity are beneficial for thermoelectric applications. In this study, the potential use as a thermoelectric material for the recently synthesized two-dimensional TiS3 monolayer is explored by applying first-principles method combined with Boltzmann transport theory. Our work demonstrates that carrier transport in the TiS3 sheet is orientation-dependent, caused by the difference in charge density distribution at band edges. Due to a variety of Ti-S bonds with longer lengths, we find that the TiS3 monolayer shows thermal conductivity much lower compared with that of transition-metal dichalcogenides such as MoS2. Combined with a high power factor along the y-direction, a considerable n-type ZT value (3.1) can be achieved at moderate carrier concentration, suggesting that the TiS3 monolayer is a good candidate for thermoelectric applications.Entities:
Keywords: Boltzmann transport equation; TiS3 monolayer; carrier mobility; first-principles calculations; thermal conductivity; thermoelectric performance; transition-metal trichalcogenide (TMTC)
Year: 2017 PMID: 28054481 DOI: 10.1021/acsami.6b14134
Source DB: PubMed Journal: ACS Appl Mater Interfaces ISSN: 1944-8244 Impact factor: 9.229