| Literature DB >> 28024332 |
Ferdinand H Farwick Zum Hagen1, Domenik M Zimmermann1, Caio C Silva1,2, Christoph Schlueter3, Nicolae Atodiresei4, Wouter Jolie1, Antonio J Martínez-Galera1, Daniela Dombrowski1,2, Ulrike A Schröder1, Moritz Will1, Predrag Lazić5, Vasile Caciuc4, Stefan Blügel4, Tien-Lin Lee3, Thomas Michely1, Carsten Busse1,2.
Abstract
Using the X-ray standing wave method, scanning tunneling microscopy, low energy electron diffraction, and density functional theory, we precisely determine the lateral and vertical structure of hexagonal boron nitride on Ir(111). The moiré superstructure leads to a periodic arrangement of strongly chemisorbed valleys in an otherwise rather flat, weakly physisorbed plane. The best commensurate approximation of the moiré unit cell is (12 × 12) boron nitride cells resting on (11 × 11) substrate cells, which is at variance with several earlier studies. We uncover the existence of two fundamentally different mechanisms of layer formation for hexagonal boron nitride, namely, nucleation and growth as opposed to network formation without nucleation. The different pathways are linked to different distributions of rotational domains, and the latter enables selection of a single orientation only.Entities:
Keywords: Ir(111); X-ray standing waves; epitaxial growth; graphene; hexagonal boron nitride; moiré; scanning tunneling microscopy
Year: 2016 PMID: 28024332 DOI: 10.1021/acsnano.6b05819
Source DB: PubMed Journal: ACS Nano ISSN: 1936-0851 Impact factor: 15.881