| Literature DB >> 28009502 |
Pulikanti Guruprasad Reddy1, Satyendra Prakash Pal1, Pawan Kumar1, Chullikkattil P Pradeep1, Subrata Ghosh1, Satinder K Sharma1, Kenneth E Gonsalves1.
Abstract
The present report demonstrates the potential of a polyarylenesulfonium polymer, poly[methyl(4-(phenylthio)-phenyl)sulfoniumtrifluoromethanesulfonate] (PAS), as a versatile nonchemically amplified negative tone photoresist for next-generation lithography (NGL) applications starting from i-line (λ ∼ 365 nm) to extreme ultraviolet (EUV, λ ∼ 13.5 nm) lithography. PAS exhibited considerable contrast (γ), 0.08, toward EUV and patterned 20 nm features successfully.Entities:
Keywords: 20 nm line patterns; EUV lithography (13.5 nm); complex features; i-line (365 nm); polyarylenesulfonium salts
Year: 2016 PMID： 28009502 DOI： 10.1021/acsami.6b10384
Source DB: PubMed Journal: ACS Appl Mater Interfaces ISSN： 1944-8244 Impact factor: 9.229