Literature DB >> 28008884

16 nm-resolution lithography using ultra-small-gap bowtie apertures.

Yang Chen1, Jin Qin, Jianfeng Chen, Liang Zhang, Chengfu Ma, Jiaru Chu, Xianfan Xu, Liang Wang.   

Abstract

Photolithography has long been a critical technology for nanoscale manufacturing, especially in the semiconductor industry. However, the diffractive nature of light has limited the continuous advance of optical lithography resolution. To overcome this obstacle, near-field scanning optical lithography (NSOL) is an alternative low-cost technique, whose resolution is determined by the near-field localization that can be achieved. Here, we apply the newly-developed backside milling method to fabricate bowtie apertures with a sub-15 nm gap, which can substantially improve the resolution of NSOL.  A highly confined electric near field is produced by localized surface plasmon excitation and nanofocusing of the closely-tapered gap. We show contact lithography results with a record 16 nm resolution (FWHM). This photolithography scheme promises potential applications in data storage, high-speed computation, energy harvesting, and other nanotechnology areas.

Year:  2016        PMID: 28008884     DOI: 10.1088/1361-6528/28/5/055302

Source DB:  PubMed          Journal:  Nanotechnology        ISSN: 0957-4484            Impact factor:   3.874


  1 in total

1.  Coherent all-optical transistor based on frustrated total internal reflection.

Authors:  A Goodarzi; M Ghanaatshoar
Journal:  Sci Rep       Date:  2018-03-22       Impact factor: 4.379

  1 in total

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