| Literature DB >> 27990702 |
Hui Cai1, Bin Chen1, Gang Wang2, Emmanuel Soignard3, Afsaneh Khosravi1, Marco Manca2, Xavier Marie2, Shery L Y Chang3, Bernhard Urbaszek2, Sefaattin Tongay1.
Abstract
A new member of the layered pseudo-1D material family-monoclinic gallium telluride (GaTe)-is synthesized by physical vapor transport on a variety of substrates. The [010] atomic chains and the resulting anisotropic behavior are clearly revealed. The GaTe flakes display multiple sharp photoluminescence emissions in the forbidden gap, which are related to defects localized around selected edges and grain boundaries.Entities:
Keywords: gallium telluride; physical vapor transport; pseudo-1D materials
Year: 2016 PMID: 27990702 DOI: 10.1002/adma.201605551
Source DB: PubMed Journal: Adv Mater ISSN: 0935-9648 Impact factor: 30.849