| Literature DB >> 27982645 |
G Manzoni1, L Gragnaniello2, G Autès3,4, T Kuhn2, A Sterzi1, F Cilento5, M Zacchigna6, V Enenkel2, I Vobornik6, L Barba7, F Bisti8, Ph Bugnon3, A Magrez3, V N Strocov8, H Berger3, O V Yazyev3,4, M Fonin2, F Parmigiani1,5,9, A Crepaldi3,5.
Abstract
The complex electronic properties of ZrTe_{5} have recently stimulated in-depth investigations that assigned this material to either a topological insulator or a 3D Dirac semimetal phase. Here we report a comprehensive experimental and theoretical study of both electronic and structural properties of ZrTe_{5}, revealing that the bulk material is a strong topological insulator (STI). By means of angle-resolved photoelectron spectroscopy, we identify at the top of the valence band both a surface and a bulk state. The dispersion of these bands is well captured by ab initio calculations for the STI case, for the specific interlayer distance measured in our x-ray diffraction study. Furthermore, these findings are supported by scanning tunneling spectroscopy revealing the metallic character of the sample surface, thus confirming the strong topological nature of ZrTe_{5}.Year: 2016 PMID: 27982645 DOI: 10.1103/PhysRevLett.117.237601
Source DB: PubMed Journal: Phys Rev Lett ISSN: 0031-9007 Impact factor: 9.161