| Literature DB >> 27982562 |
Van-Huong Tran1,2, Rohan B Ambade2, Swapnil B Ambade2, Soo-Hyoung Lee2, In-Hwan Lee1.
Abstract
SnO2 recently has attracted particular attention as a powerful buffer layer for organic optoelectronic devices due to its outstanding properties such as high electron mobility, suitable band alignment, and high optical transparency. Here, we report on facile low-temperature solution-processed SnO2 nanoparticles (NPs) in applications for a cathode buffer layer (CBL) of inverted organic solar cells (iOSCs). The conduction band energy of SnO2 NPs estimated by ultraviolet photoelectron spectroscopy was 4.01 eV, a salient feature that is necessary for an appropriate CBL. Using SnO2 NPs as CBL derived from a 0.1 M precursor concentration, P3HT:PC60BM-based iOSCs showed the best power conversion efficiency (PCE) of 2.9%. The iOSC devices using SnO2 NPs as CBL revealed excellent long-term device stabilities, and the PCE was retained at ∼95% of its initial value after 10 weeks in ambient air. These solution-processed SnO2 NPs are considered to be suitable for the low-cost, high throughput roll-to-roll process on a flexible substrate for optoelectronic devices.Entities:
Keywords: SnO2 nanoparticles; cathode buffer layer; inverted organic solar cells; low-temperature synthesis; nanoparticle morphology; solution-processed metal oxide
Year: 2017 PMID: 27982562 DOI: 10.1021/acsami.6b10857
Source DB: PubMed Journal: ACS Appl Mater Interfaces ISSN: 1944-8244 Impact factor: 9.229