| Literature DB >> 27976838 |
Hongjun Chen1, Miaoqiang Lyu1, Meng Zhang1, Krishna Feron2,3, Debra J Searles4, Matthew Dargusch5, Xiangdong Yao6, Lianzhou Wang1.
Abstract
A new type of SnS2 nanoplate photoelectrode is prepared by using a mild wet-chemical method. Depending on the calcination temperatures, SnS2 -based photoelectrodes can either retain their n-type nature with greatly enhanced anodic photocurrent density (ca. 1.2 mA cm-2 at 0.8 V vs. Ag/AgCl) or be completely converted into p-type SnS to generate approximately 0.26 mA cm-2 cathodic photocurrent density at -0.8 V vs. Ag/AgCl. The dominance of sulfur and tin vacancies are found to account for the dramatically different photoelectrochemical behaviors of n-type SnS2 and p-type SnS photoelectrodes. In addition, the band structures of n-type SnS2 and p-type SnS photoelectrodes are also deduced, which may provide an effective strategy for developing SnS2 /SnS films with controllable energy-band levels through a simple calcination treatment.Entities:
Keywords: calcination; nanostructures; photoelectrochemistry; semiconductors; tin
Mesh:
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Year: 2017 PMID: 27976838 DOI: 10.1002/cssc.201601603
Source DB: PubMed Journal: ChemSusChem ISSN: 1864-5631 Impact factor: 8.928