| Literature DB >> 27960479 |
Zetao Zhu1, Masaru Suzuki1, Kazuki Nagashima1, Hideto Yoshida2, Masaki Kanai1, Gang Meng1, Hiroshi Anzai1, Fuwei Zhuge1, Yong He1, Mickaël Boudot1, Seiji Takeda2, Takeshi Yanagida1.
Abstract
Vapor-liquid-solid (VLS) growth process of single crystalline metal oxide nanowires has proven the excellent ability to tailor the nanostructures. However, the VLS process of metal oxides in general requires relatively high growth temperatures, which essentially limits the application range. Here we propose a rational concept to reduce the growth temperature in VLS growth process of various metal oxide nanowires. Molecular dynamics (MD) simulation theoretically predicts that it is possible to reduce the growth temperature in VLS process of metal oxide nanowires by precisely controlling the vapor flux. This concept is based on the temperature dependent "material flux window" that the appropriate vapor flux for VLS process of nanowire growth decreases with decreasing the growth temperature. Experimentally, we found the applicability of this concept for reducing the growth temperature of VLS processes for various metal oxides including MgO, SnO2, and ZnO. In addition, we show the successful applications of this concept to VLS nanowire growths of metal oxides onto tin-doped indium oxide (ITO) glass and polyimide (PI) substrates, which require relatively low growth temperatures.Entities:
Keywords: Metal oxide nanowires; low temperature growth; material flux window; temperature dependence; vapor−liquid−solid growth
Year: 2016 PMID: 27960479 DOI: 10.1021/acs.nanolett.6b03227
Source DB: PubMed Journal: Nano Lett ISSN: 1530-6984 Impact factor: 11.189