| Literature DB >> 27936656 |
Yanling Pei1, Cheng Chang1, Zhe Wang2,3, Meijie Yin2,3, Minghui Wu2,3, Gangjian Tan4, Haijun Wu2,3,5, Yuexing Chen2,3, Lei Zheng1, Shengkai Gong1, Tiejun Zhu6, Xinbing Zhao6, Li Huang2,3, Jiaqing He2,3, Mercouri G Kanatzidis4, Li-Dong Zhao1.
Abstract
We report that K2Bi8Se13 exhibits multiple conduction bands that lie close in energy and can be activated through doping, leading to a highly enhanced Seebeck coefficient and a high power factor with elevated temperature. Meanwhile, the large unit cell, complex low symmetry crystal structure, and nondirectional bonding lead to the very low lattice thermal conductivity of K2Bi8Se13, ranging between 0.42 and 0.20 W m-1 K-1 in the temperature interval 300-873 K. Experimentally, we further support the low thermal conductivity of K2Bi8Se13 using phonon velocity measurements; the results show a low average phonon velocity (1605 ms-1), small Young's modulus (37.1 GPa), large Grüneisen parameter (1.71), and low Debye temperature (154 K). A detailed investigation of the microstructure and defects was carried out using electron diffraction and transmission microscopy which reveal the presence of a K2.5Bi8.5Se14 minor phase intergrown along the side of the K2Bi8Se13 phase. The combination of enhanced power factor and low thermal conductivity results in a high ZT value of ∼1.3 at 873 K in electron doped K2Bi8Se13 material.Year: 2016 PMID: 27936656 DOI: 10.1021/jacs.6b09568
Source DB: PubMed Journal: J Am Chem Soc ISSN: 0002-7863 Impact factor: 15.419