Literature DB >> 27936535

Toward Switchable Photovoltaic Effect via Tailoring Mobile Oxygen Vacancies in Perovskite Oxide Films.

Chen Ge1, Kui-Juan Jin1,2, Qing-Hua Zhang3, Jian-Yu Du1,4, Lin Gu1,2, Hai-Zhong Guo1, Jing-Ting Yang1, Jun-Xing Gu1, Meng He1, Jie Xing4, Can Wang1, Hui-Bin Lu1, Guo-Zhen Yang1,2.   

Abstract

The defect chemistry of perovskite oxides involves the cause to most of their abundant functional properties, including interface magnetism, charge transport, ionic exchange, and catalytic activity. The possibility to achieve dynamic control over oxygen anion vacancies offers a unique opportunity for the development of appealing switchable devices, which at present are commonly based on ferroelectric materials. Herein, we report the discovery of a switchable photovoltaic effect, that the sign of the open voltage and the short circuit current can be reversed by inverting the polarity of the applied field, upon electrically tailoring the distribution of oxygen vacancies in perovskite oxide films. This phenomenon is demonstrated in lateral photovoltaic devices based on both ferroelectric BiFeO3 and paraelectric SrTiO3 films, under a reversed applied field whose magnitude is much smaller than the coercivity value of BiFeO3. The migration of oxygen vacancies was directly observed by employing an advanced annular bright-field scanning transmission electron microscopy technique with in situ biasing equipment. We conclude that the band bending induced by the motion of oxygen vacancies is the driving force for the reversible switching between two photovoltaic states. The present work can provide an active path for the design of novel switchable photovoltaic devices with a wide range of transition metal oxides in terms of the ionic degrees of freedom.

Entities:  

Keywords:  ion drift; laser molecular beam epitaxy; oxygen vacancy; perovskite oxide films; switchable photovoltaic effect

Year:  2016        PMID: 27936535     DOI: 10.1021/acsami.6b13203

Source DB:  PubMed          Journal:  ACS Appl Mater Interfaces        ISSN: 1944-8244            Impact factor:   9.229


  4 in total

1.  Synaptic memory devices from CoO/Nb:SrTiO3 junction.

Authors:  Le Zhao; Jie Xu; Xiantao Shang; Xue Li; Qiang Li; Shandong Li
Journal:  R Soc Open Sci       Date:  2019-04-17       Impact factor: 2.963

Review 2.  Photoinduced electronic and ionic effects in strontium titanate.

Authors:  Matthäus Siebenhofer; Alexander Viernstein; Maximilian Morgenbesser; Jürgen Fleig; Markus Kubicek
Journal:  Mater Adv       Date:  2021-10-26

3.  Origin of abnormal structural transformation in a (BiPb)FeO3/SrRuO3/SrTiO3 hetero-structure probed by Rutherford backscattering.

Authors:  Murtaza Bohra; Kartikeya Negi; Varun Karthik Y S; Hsiung Chou; X Wang; W K Chu
Journal:  Sci Rep       Date:  2017-07-03       Impact factor: 4.379

4.  Understanding memristive switching via in situ characterization and device modeling.

Authors:  Wen Sun; Bin Gao; Miaofang Chi; Qiangfei Xia; J Joshua Yang; He Qian; Huaqiang Wu
Journal:  Nat Commun       Date:  2019-08-01       Impact factor: 14.919

  4 in total

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