| Literature DB >> 27934086 |
Seon Namgung1, Jonah Shaver1, Sang-Hyun Oh1, Steven J Koester1.
Abstract
With strong light-matter interaction in their atomically thin layered structures, two-dimensional (2D) materials have been widely investigated for optoelectronic applications such as photodetectors and photovoltaic devices. Depending on the aim of optoelectronic applications, different device structures have been employed. Lateral phototransistor structures have been employed for high optical gain, while vertical photodiode structures have been employed for fast response and low power operation. Herein, we demonstrate a multimodal photodetector platform based on 2D materials, combining both a phototransistor and a photodiode and taking the corresponding desirable characteristics from each structure within a single device. In this platform, a multilayered transition-metal dichalcogenide flake is transferred on top of metal electrodes, and a transparent gate electrode is employed. The channel region of the flake between electrodes operates as a phototransistor providing a high gain mode, while the electrode region in the same flake operates as a vertical Schottky photodiode providing a fast response mode. These modes can be dynamically selected by controlling the drain voltage and gate voltage.Entities:
Keywords: 2D materials; Schottky barrier; multimodal; photodiode; phototransistor
Year: 2016 PMID: 27934086 DOI: 10.1021/acsnano.6b06468
Source DB: PubMed Journal: ACS Nano ISSN: 1936-0851 Impact factor: 15.881