| Literature DB >> 27933974 |
Philip Schulz1,2, Jan O Tiepelt1, Jeffrey A Christians2, Igal Levine3, Eran Edri3, Erin M Sanehira2,4, Gary Hodes3, David Cahen3, Antoine Kahn1.
Abstract
We investigate the effect of high work function contacts in halide perovskite absorber-based photovoltaic devices. Photoemission spectroscopy measurements reveal that band bending is induced in the absorber by the deposition of the high work function molybdenum trioxide (MoO3). We find that direct contact between MoO3 and the perovskite leads to a chemical reaction, which diminishes device functionality. Introducing an ultrathin spiro-MeOTAD buffer layer prevents the reaction, yet the altered evolution of the energy levels in the methylammonium lead iodide (MAPbI3) layer at the interface still negatively impacts device performance.Entities:
Keywords: band offsets; charge carrier transport; electronic structures/processes/mechanisms; hybrid materials; photoemission spectroscopy; photovoltaic devices
Year: 2016 PMID: 27933974 DOI: 10.1021/acsami.6b10898
Source DB: PubMed Journal: ACS Appl Mater Interfaces ISSN: 1944-8244 Impact factor: 9.229