| Literature DB >> 27933922 |
Zongping Chen1, Wen Zhang1, Carlos-Andres Palma2, Alberto Lodi Rizzini3,4, Bilu Liu5, Ahmad Abbas5,6, Nils Richter7,8, Leonardo Martini3,4, Xiao-Ye Wang1, Nicola Cavani3,4, Hao Lu1, Neeraj Mishra9, Camilla Coletti9, Reinhard Berger10, Florian Klappenberger2, Mathias Kläui7,8, Andrea Candini4, Marco Affronte3,4, Chongwu Zhou5, Valentina De Renzi3,4, Umberto Del Pennino3,4, Johannes V Barth2, Hans Joachim Räder1, Akimitsu Narita1, Xinliang Feng10, Klaus Müllen1.
Abstract
Graphene nanoribbons (GNRs), quasi-one-dimensional graphene strips, have shown great potential for nanoscale electronics, optoelectronics, and photonics. Atomically precise GNRs can be "bottom-up" synthesized by surface-assisted assembly of molecular building blocks under ultra-high-vacuum conditions. However, large-scale and efficient synthesis of such GNRs at low cost remains a significant challenge. Here we report an efficient "bottom-up" chemical vapor deposition (CVD) process for inexpensive and high-throughput growth of structurally defined GNRs with varying structures under ambient-pressure conditions. The high quality of our CVD-grown GNRs is validated by a combination of different spectroscopic and microscopic characterizations. Facile, large-area transfer of GNRs onto insulating substrates and subsequent device fabrication demonstrate their promising potential as semiconducting materials, exhibiting high current on/off ratios up to 6000 in field-effect transistor devices. This value is 3 orders of magnitude higher than values reported so far for other thin-film transistors of structurally defined GNRs. Notably, on-surface mass spectrometry analyses of polymer precursors provide unprecedented evidence for the chemical structures of the resulting GNRs, especially the heteroatom doping and heterojunctions. These results pave the way toward the scalable and controllable growth of GNRs for future applications.Entities:
Year: 2016 PMID: 27933922 DOI: 10.1021/jacs.6b10374
Source DB: PubMed Journal: J Am Chem Soc ISSN: 0002-7863 Impact factor: 15.419