| Literature DB >> 27933841 |
Yugandhar Bitla1, Ching Chen1, Hsien-Chang Lee1, Thi Hien Do2, Chun-Hao Ma3, Le Van Qui1, Chun-Wei Huang1, Wen-Wei Wu1, Li Chang1, Po-Wen Chiu3, Ying-Hao Chu1,2,4.
Abstract
The emerging technological demands for flexible and transparent electronic devices have compelled researchers to look beyond the current silicon-based electronics. However, fabrication of devices on conventional flexible substrates with superior performance are constrained by the trade-off between processing temperature and device performance. Here, we propose an alternative strategy to circumvent this issue via the heteroepitaxial growth of transparent conducting oxides (TCO) on the flexible mica substrate with performance comparable to that of their rigid counterparts. With the examples of ITO and AZO as a case study, a strong emphasis is laid upon the growth of flexible yet epitaxial TCO relying muscovite's superior properties compared to those of conventional flexible substrates and its compatibility with the present fabrication methods. Besides excellent optoelectro-mechanical properties, an additional functionality of high-temperature stability, normally lacking in the current state-of-the-art transparent flexitronics, is provided by these heterostructures. These epitaxial TCO electrodes with good chemical and thermal stabilities as well as mechanical durability can significantly contribute to the field of flexible, light-weight, and portable smart electronics.Entities:
Keywords: flexible electronics; heteroepitaxy; muscovite mica; optoelectronics; transparent conducting oxides
Year: 2016 PMID: 27933841 DOI: 10.1021/acsami.6b10631
Source DB: PubMed Journal: ACS Appl Mater Interfaces ISSN: 1944-8244 Impact factor: 9.229