| Literature DB >> 27918109 |
Abd Rashid Bin Mohd Yusoff1,2, Hyeong Pil Kim2, Xiuling Li2, Jeongmo Kim2, Jin Jang2, Mohammad Khaja Nazeeruddin1.
Abstract
Ambipolar perovskite field-effect transistors and inverters with balanced mobilities are demonstrated. Thin-film field-effect-transistor-like inverters are developed, and a maximum gain of 23 in the first quadrant for VDD = 80 V is obtained.Entities:
Keywords: ambipolar; field effect transistors; inverters; triple cation perovskite
Year: 2016 PMID: 27918109 DOI: 10.1002/adma.201602940
Source DB: PubMed Journal: Adv Mater ISSN: 0935-9648 Impact factor: 30.849