| Literature DB >> 27877615 |
Yun-Lei Sun1, Abduweli Ablimit1, Jin-Ke Bao1, Hao Jiang1, Jie Zhou1, Guang-Han Cao2.
Abstract
Single crystals of a new iron-based superconductor Ba2Ti2Fe2As4O have been grown successfully via a Ba2As3-flux method in a sealed evacuated quartz tube. Bulk superconductivity with Tc ∼ 21.5 K was demonstrated in resistivity and magnetic susceptibility measurements after the as-grown crystals were annealed at 500 °C in vacuum for a week. X-ray diffraction patterns confirm that the annealed and the as-grown crystals possess the identical crystallographic structure of Ba2Ti2Fe2As4O. Energy-dispersive x-ray spectra indicate that partial Ti/Fe substitution exists in the [Fe2As2] layers and the annealing process redistributes the Ti within the Fe-plane. The ordered Fe-plane stabilized by annealing exhibits superconductivity with magnetic vortex pinned by Ti.Entities:
Keywords: Ba2Ti2Fe2As4O; iron-based superconductor; single crystal growth
Year: 2013 PMID: 27877615 PMCID: PMC5090378 DOI: 10.1088/1468-6996/14/5/055008
Source DB: PubMed Journal: Sci Technol Adv Mater ISSN: 1468-6996 Impact factor: 8.090
Figure 1.Powder XRD pattern for a ground Ba2Ti2Fe2As4O single crystal.
Figure 2.Photographs and XRD patterns for (a) as-grown and (b) annealed crystals of Ba2Ti2Fe2As4O. (c) XRD rocking curve and full-width at half-maximum for (0016) reflection of the annealed crystals. The inset of (c) is the x-ray transmission Laue photograph of Ba2Ti2Fe2As4O single crystal in the x-ray perpendicular to the ab-plane.
Figure 3.SEM images and typical EDS spectra of a Ba2Ti2Fe2As4O crystal before (a) and after annealing (b). EDS data were collected on the region framed with pink lines.
Results of the EDS analysis for the specified regions of as-grown and annealed crystals of Ba2Ti2Fe2As4O displayed in figure 3. The data in parentheses denote the standard deviation (2σ).
| Crystals | Ba (%) | Ti (%) | Fe (%) | As (%) |
|---|---|---|---|---|
| As-grown | 20.9(±0.3) | 22.6(±0.3) | 18.2(±0.3) | 38.3(±0.2) |
| Annealed | 20.1(±0.3) | 21.9(±0.3) | 18.2(±0.3) | 39.8(±0.3) |
Figure 4.Electrical resistivity in the ab-plane for as-grown (pink squares) and annealed crystals (olive circles) of Ba2Ti2Fe2As4O. The inset zooms in the normalized electrical resistivity at low temperatures.
Figure 5.Temperature dependence of magnetic susceptibility for annealed crystals Ba2Ti2Fe2As4O with H∥c (pink dots) and H∥ab (blue dots), respectively. Zero-field cooling (ZFC) and field cooling (FC) processes were employed at field H = 1 Oe. The inset is magnetic susceptibility at a high magnetic field (H = 1 kOe) at high temperatures.