Literature DB >> 27877376

Atomic switches: atomic-movement-controlled nanodevices for new types of computing.

Takami Hino1, Tsuyoshi Hasegawa2, Kazuya Terabe1, Tohru Tsuruoka2, Alpana Nayak1, Takeo Ohno2, Masakazu Aono1.   

Abstract

Atomic switches are nanoionic devices that control the diffusion of metal cations and their reduction/oxidation processes in the switching operation to form/annihilate a metal atomic bridge, which is a conductive path between two electrodes in the on-state. In contrast to conventional semiconductor devices, atomic switches can provide a highly conductive channel even if their size is of nanometer order. In addition to their small size and low on-resistance, their nonvolatility has enabled the development of new types of programmable devices, which may achieve all the required functions on a single chip. Three-terminal atomic switches have also been developed, in which the formation and annihilation of a metal atomic bridge between a source electrode and a drain electrode are controlled by a third (gate) electrode. Three-terminal atomic switches are expected to enhance the development of new types of logic circuits, such as nonvolatile logic. The recent development of atomic switches that use a metal oxide as the ionic conductive material has enabled the integration of atomic switches with complementary metal-oxide-semiconductor (CMOS) devices, which will facilitate the commercialization of atomic switches. The novel characteristics of atomic switches, such as their learning and photosensing abilities, are also introduced in the latter part of this review.

Entities:  

Keywords:  atomic switches; learning ability; nanoionic devices; nonvolatility; photosensing ability; three-terminal switch

Year:  2011        PMID: 27877376      PMCID: PMC5090398          DOI: 10.1088/1468-6996/12/1/11660945

Source DB:  PubMed          Journal:  Sci Technol Adv Mater        ISSN: 1468-6996            Impact factor:   8.090


  16 in total

1.  Gate-controlled atomic quantum switch.

Authors:  F-Q Xie; L Nittler; Ch Obermair; Th Schimmel
Journal:  Phys Rev Lett       Date:  2004-09-15       Impact factor: 9.161

2.  Quantum contact in gold nanostructures by scanning tunneling microscopy.

Authors: 
Journal:  Phys Rev Lett       Date:  1993-09-20       Impact factor: 9.161

3.  Learning abilities achieved by a single solid-state atomic switch.

Authors:  Tsuyoshi Hasegawa; Takeo Ohno; Kazuya Terabe; Tohru Tsuruoka; Tomonobu Nakayama; James K Gimzewski; Masakazu Aono
Journal:  Adv Mater       Date:  2010-04-22       Impact factor: 30.849

4.  Photoassisted formation of an atomic switch.

Authors:  Takami Hino; Hirofumi Tanaka; Tsuyoshi Hasegawa; Masakazu Aono; Takuji Ogawa
Journal:  Small       Date:  2010-08-16       Impact factor: 13.281

5.  Ionic-electronic conductor nanostructures: template-confined growth and nonlinear electrical transport.

Authors:  Changhao Liang; Kazuya Terabe; Tsuyoshi Hasegawa; Ryota Negishi; Takuro Tamura; Masakazu Aono
Journal:  Small       Date:  2005-10       Impact factor: 13.281

6.  Nanoionics-based resistive switching memories.

Authors:  Rainer Waser; Masakazu Aono
Journal:  Nat Mater       Date:  2007-11       Impact factor: 43.841

7.  Conductance switching in Ag(2)S devices fabricated by in situ sulfurization.

Authors:  M Morales-Masis; S J van der Molen; W T Fu; M B Hesselberth; J M van Ruitenbeek
Journal:  Nanotechnology       Date:  2009-02-11       Impact factor: 3.874

8.  Quantum point contact switches.

Authors:  D P Smith
Journal:  Science       Date:  1995-07-21       Impact factor: 47.728

9.  Light-controlled conductance switching of ordered metal-molecule-metal devices.

Authors:  Sense Jan van der Molen; Jianhui Liao; Tibor Kudernac; Jon S Agustsson; Laetitia Bernard; Michel Calame; Bart J van Wees; Ben L Feringa; Christian Schönenberger
Journal:  Nano Lett       Date:  2009-01       Impact factor: 11.189

10.  Memristive switching mechanism for metal/oxide/metal nanodevices.

Authors:  J Joshua Yang; Matthew D Pickett; Xuema Li; Douglas A A Ohlberg; Duncan R Stewart; R Stanley Williams
Journal:  Nat Nanotechnol       Date:  2008-06-15       Impact factor: 39.213

View more
  1 in total

1.  Modeling of memristive and memcapacitive behaviors in metal-oxide junctions.

Authors:  M G A Mohamed; HyungWon Kim; Tae-Won Cho
Journal:  ScientificWorldJournal       Date:  2015-01-29
  1 in total

北京卡尤迪生物科技股份有限公司 © 2022-2023.