Literature DB >> 27874238

Li-Ion Synaptic Transistor for Low Power Analog Computing.

Elliot J Fuller1, Farid El Gabaly1, François Léonard1, Sapan Agarwal2, Steven J Plimpton2, Robin B Jacobs-Gedrim2, Conrad D James2, Matthew J Marinella2, A Alec Talin1.   

Abstract

Nonvolatile redox transistors (NVRTs) based upon Li-ion battery materials are demonstrated as memory elements for neuromorphic computer architectures with multi-level analog states, "write" linearity, low-voltage switching, and low power dissipation. Simulations of backpropagation using the device properties reach ideal classification accuracy. Physics-based simulations predict energy costs per "write" operation of <10 aJ when scaled to 200 nm × 200 nm.
© 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Keywords:  data storage; nanodevices; transistors

Year:  2016        PMID： 27874238     DOI： 10.1002/adma.201604310

Source DB:  PubMed          Journal:  Adv Mater        ISSN： 0935-9648            Impact factor:   30.849


  19 in total

1.  Quasi-two-dimensional α-molybdenum oxide thin film prepared by magnetron sputtering for neuromorphic computing.

Authors:  Zhenfa Wu; Peng Shi; Ruofei Xing; Yuzhi Xing; Yufeng Ge; Lin Wei; Dong Wang; Le Zhao; Shishen Yan; Yanxue Chen
Journal:  RSC Adv       Date:  2022-06-15       Impact factor: 4.036

2.  Training Deep Convolutional Neural Networks with Resistive Cross-Point Devices.

Authors:  Tayfun Gokmen; Murat Onen; Wilfried Haensch
Journal:  Front Neurosci       Date:  2017-10-10       Impact factor: 4.677

3.  Neuromorphic computing with multi-memristive synapses.

Authors:  Irem Boybat; Manuel Le Gallo; S R Nandakumar; Timoleon Moraitis; Thomas Parnell; Tomas Tuma; Bipin Rajendran; Yusuf Leblebici; Abu Sebastian; Evangelos Eleftheriou
Journal:  Nat Commun       Date:  2018-06-28       Impact factor: 14.919

4.  Training LSTM Networks With Resistive Cross-Point Devices.

Authors:  Tayfun Gokmen; Malte J Rasch; Wilfried Haensch
Journal:  Front Neurosci       Date:  2018-10-24       Impact factor: 4.677

5.  Lithium ion trapping mechanism of SiO2 in LiCoO2 based memristors.

Authors:  Qi Hu; Runmiao Li; Xinjiang Zhang; Qin Gao; Mei Wang; Hongliang Shi; Zhisong Xiao; Paul K Chu; Anping Huang
Journal:  Sci Rep       Date:  2019-03-25       Impact factor: 4.379

6.  Weighted Synapses Without Carry Operations for RRAM-Based Neuromorphic Systems.

Authors:  Yan Liao; Ning Deng; Huaqiang Wu; Bin Gao; Qingtian Zhang; He Qian
Journal:  Front Neurosci       Date:  2018-03-16       Impact factor: 4.677

7.  Temperature-resilient solid-state organic artificial synapses for neuromorphic computing.

Authors:  A Melianas; T J Quill; G LeCroy; Y Tuchman; H V Loo; S T Keene; A Giovannitti; H R Lee; I P Maria; I McCulloch; A Salleo
Journal:  Sci Adv       Date:  2020-07-03       Impact factor: 14.136

8.  Vertical organic synapse expandable to 3D crossbar array.

Authors:  Yongsuk Choi; Seyong Oh; Chuan Qian; Jin-Hong Park; Jeong Ho Cho
Journal:  Nat Commun       Date:  2020-09-14       Impact factor: 14.919

9.  Artificial 2D van der Waals Synapse Devices via Interfacial Engineering for Neuromorphic Systems.

Authors:  Woojin Park; Hye Yeon Jang; Jae Hyeon Nam; Jung-Dae Kwon; Byungjin Cho; Yonghun Kim
Journal:  Nanomaterials (Basel)       Date:  2020-01-02       Impact factor: 5.076

10.  Near ideal synaptic functionalities in Li ion synaptic transistor using Li3POxSex electrolyte with high ionic conductivity.

Authors:  Revannath Dnyandeo Nikam; Myonghoon Kwak; Jongwon Lee; Krishn Gopal Rajput; Writam Banerjee; Hyunsang Hwang
Journal:  Sci Rep       Date:  2019-12-11       Impact factor: 4.379
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