Literature DB >> 27862413

Reconfigurable Magnetic Logic Combined with Nonvolatile Memory Writing.

Zhaochu Luo1, Ziyao Lu1, Chengyue Xiong1, Tao Zhu2, Wei Wu3, Qiang Zhang4, Huaqiang Wu3, Xixiang Zhang4, Xiaozhong Zhang1.   

Abstract

In magnetic logic, four basic Boolean logic operations can be programmed by a magnetic bit at room temperature with a high output ratio (>103 %). In the same clock cycle, benefiting from the built-in spin Hall effect, logic results can be directly written into magnetic bits using an all-electric method.
© 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Keywords:  anomalous Hall effect; magnetic logic; negative differential resistance; nonvolatile memory; spin Hall effect

Year:  2016        PMID: 27862413     DOI: 10.1002/adma.201605027

Source DB:  PubMed          Journal:  Adv Mater        ISSN: 0935-9648            Impact factor:   30.849


  2 in total

1.  Voltage-Controlled Magnetoresistance in Silicon Nanowire Transistors.

Authors:  Yawen Zhang; Jiewen Fan; Qianqian Huang; Jiadi Zhu; Yang Zhao; Ming Li; Yanqing Wu; Ru Huang
Journal:  Sci Rep       Date:  2018-10-12       Impact factor: 4.379

2.  All-Electrical Control of Compact SOT-MRAM: Toward Highly Efficient and Reliable Non-Volatile In-Memory Computing.

Authors:  Huai Lin; Xi Luo; Long Liu; Di Wang; Xuefeng Zhao; Ziwei Wang; Xiaoyong Xue; Feng Zhang; Guozhong Xing
Journal:  Micromachines (Basel)       Date:  2022-02-18       Impact factor: 2.891

  2 in total

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