Literature DB >> 27859857

Giant Rashba Splitting in Pb1-x Snx Te (111) Topological Crystalline Insulator Films Controlled by Bi Doping in the Bulk.

Valentine V Volobuev1,2, Partha S Mandal3, Marta Galicka4, Ondřej Caha5, Jaime Sánchez-Barriga3, Domenico Di Sante6,7, Andrei Varykhalov3, Amir Khiar1, Silvia Picozzi6, Günther Bauer1, Perla Kacman4, Ryszard Buczko4, Oliver Rader3, Gunther Springholz1.   

Abstract

The topological properties of lead-tin chalcogenide topological crystalline insulators can be widely tuned by temperature and composition. It is shown that bulk Bi doping of epitaxial Pb1-x Snx Te (111) films induces a giant Rashba splitting at the surface that can be tuned by the doping level. Tight binding calculations identify their origin as Fermi level pinning by trap states at the surface.
© 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Entities:  

Keywords:  IV-VI semiconductors; Rashba effect; crystalline insulators; molecular beam epitaxy; photoemission spectroscopy

Year:  2016        PMID： 27859857     DOI： 10.1002/adma.201604185

Source DB:  PubMed          Journal:  Adv Mater        ISSN： 0935-9648            Impact factor:   30.849


  2 in total

Review 1.  The Property, Preparation and Application of Topological Insulators: A Review.

Authors:  Wenchao Tian; Wenbo Yu; Jing Shi; Yongkun Wang
Journal:  Materials (Basel)       Date:  2017-07-17       Impact factor: 3.623

2.  Photoelectromagnetic Effect Induced by Terahertz Laser Radiation in Topological Crystalline Insulators Pb1-xSnxTe.

Authors:  Alexandra V Galeeva; Dmitry A Belov; Aleksei S Kazakov; Anton V Ikonnikov; Alexey I Artamkin; Ludmila I Ryabova; Valentine V Volobuev; Gunther Springholz; Sergey N Danilov; Dmitry R Khokhlov
Journal:  Nanomaterials (Basel)       Date:  2021-11-26       Impact factor: 5.076
  2 in total

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