| Literature DB >> 27859732 |
Muhammad Usman1, Shruti Mendiratta1, Kuang-Lieh Lu1.
Abstract
Metal-organic frameworks (MOFs) with low density, high porosity, and easy tunability of functionality and structural properties, represent potential candidates for use as semiconductor materials. The rapid development of the semiconductor industry and the continuous miniaturization of feature sizes of integrated circuits toward the nanometer (nm) scale require novel semiconductor materials instead of traditional materials like silicon, germanium, and gallium arsenide etc. MOFs with advantageous properties of both the inorganic and the organic components promise to serve as the next generation of semiconductor materials for the microelectronics industry with the potential to be extremely stable, cheap, and mechanically flexible. Here, a perspective of recent research is provided, regarding the semiconducting properties of MOFs, bandgap studies, and their potential in microelectronic devices.Entities:
Keywords: bandgap; metal-organic frameworks; semiconductors
Year: 2016 PMID: 27859732 DOI: 10.1002/adma.201605071
Source DB: PubMed Journal: Adv Mater ISSN: 0935-9648 Impact factor: 30.849