| Literature DB >> 27859707 |
Dehui Li1, Hung-Chieh Cheng2, Yiliu Wang1, Zipeng Zhao2, Gongming Wang3, Hao Wu2, Qiyuan He1, Yu Huang4, Xiangfeng Duan3.
Abstract
Transformation of unipolar n-type semiconductor behavior to ambipolar and finally to unipolar p-type behavior in CH3 NH3 PbI3 microplate field-effect transistors by thermal annealing is reported. The photoluminescence spectra essentially maintain the same features before and after the thermal annealing process, demonstrating that the charge transport measurement provides a sensitive way to probe low-concentration defects in perovskite materials.Entities:
Keywords: graphene contact; perovskite microplate transistors; thermal annealing
Year: 2016 PMID: 27859707 DOI: 10.1002/adma.201601959
Source DB: PubMed Journal: Adv Mater ISSN: 0935-9648 Impact factor: 30.849