| Literature DB >> 27858438 |
Yangmu Li1, W Tabis1,2, G Yu1, N Barišić3,4, M Greven1.
Abstract
Systematic analysis of the planar resistivity, Hall effect, and cotangent of the Hall angle for the electron-doped cuprates reveals underlying Fermi-liquid behavior even deep in the antiferromagnetic part of the phase diagram. The transport scattering rate exhibits a quadratic temperature dependence, and is nearly independent of doping and compound and carrier type (electrons versus holes), and hence is universal. Our analysis moreover indicates that the material-specific resistivity upturn at low temperatures and low doping has the same origin in both electron- and hole-doped cuprates.Entities:
Year: 2016 PMID: 27858438 DOI: 10.1103/PhysRevLett.117.197001
Source DB: PubMed Journal: Phys Rev Lett ISSN: 0031-9007 Impact factor: 9.161