Literature DB >> 27841389

Mimicking the brain functions of learning, forgetting and explicit/implicit memories with SrTiO3-based memristive devices.

Xue-Bing Yin1, Rui Yang1, Kan-Hao Xue2, Zheng-Hua Tan1, Xiao-Dong Zhang1, Xiang-Shui Miao2, Xin Guo1.   

Abstract

To implement the complex brain functions of learning, forgetting and memory in a single electronic device is very advantageous for realizing artificial intelligence. As a proof of concept, memristive devices with a simple structure of Ni/Nb-SrTiO3/Ti were investigated in this work. The functions of learning, forgetting and memory were successfully mimicked using the memristive devices, and the "time-saving" effect of implicit memory was also demonstrated. The physics behind the brain functions is simply the modulation of the Schottky barrier at the Ni/SrTiO3 interface. The realization of various psychological functions in a single device simplifies the construction of the artificial neural network and facilitates the advent of artificial intelligence.

Entities:  

Year:  2016        PMID: 27841389     DOI: 10.1039/c6cp06049h

Source DB:  PubMed          Journal:  Phys Chem Chem Phys        ISSN: 1463-9076            Impact factor:   3.676


  1 in total

1.  Gate Tuning of Synaptic Functions Based on Oxygen Vacancy Distribution Control in Four-Terminal TiO2-x Memristive Devices.

Authors:  Zenya Nagata; Takuma Shimizu; Tsuyoshi Isaka; Tetsuya Tohei; Nobuyuki Ikarashi; Akira Sakai
Journal:  Sci Rep       Date:  2019-07-10       Impact factor: 4.379

  1 in total

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