| Literature DB >> 27841389 |
Xue-Bing Yin1, Rui Yang1, Kan-Hao Xue2, Zheng-Hua Tan1, Xiao-Dong Zhang1, Xiang-Shui Miao2, Xin Guo1.
Abstract
To implement the complex brain functions of learning, forgetting and memory in a single electronic device is very advantageous for realizing artificial intelligence. As a proof of concept, memristive devices with a simple structure of Ni/Nb-SrTiO3/Ti were investigated in this work. The functions of learning, forgetting and memory were successfully mimicked using the memristive devices, and the "time-saving" effect of implicit memory was also demonstrated. The physics behind the brain functions is simply the modulation of the Schottky barrier at the Ni/SrTiO3 interface. The realization of various psychological functions in a single device simplifies the construction of the artificial neural network and facilitates the advent of artificial intelligence.Entities:
Year: 2016 PMID: 27841389 DOI: 10.1039/c6cp06049h
Source DB: PubMed Journal: Phys Chem Chem Phys ISSN: 1463-9076 Impact factor: 3.676