| Literature DB >> 27792378 |
Benedikt Scharf1, Alex Matos-Abiague1, Jong E Han1, Ewelina M Hankiewicz2, Igor Žutić1.
Abstract
We investigate tunneling across a single ferromagnetic barrier on the surface of a three-dimensional topological insulator. In the presence of a magnetization component along the bias direction, a tunneling planar Hall conductance (TPHC), transverse to the applied bias, develops. Electrostatic control of the barrier enables a giant Hall angle, with the TPHC exceeding the longitudinal tunneling conductance. By changing the in-plane magnetization direction, it is possible to change the sign of both the longitudinal and transverse differential conductance without opening a gap in the topological surface state. The transport in a topological-insulator-ferromagnet junction can, thus, be drastically altered from a simple spin valve to an amplifier.Entities:
Year: 2016 PMID: 27792378 DOI: 10.1103/PhysRevLett.117.166806
Source DB: PubMed Journal: Phys Rev Lett ISSN: 0031-9007 Impact factor: 9.161