Literature DB >> 27792378

Tunneling Planar Hall Effect in Topological Insulators: Spin Valves and Amplifiers.

Benedikt Scharf1, Alex Matos-Abiague1, Jong E Han1, Ewelina M Hankiewicz2, Igor Žutić1.   

Abstract

We investigate tunneling across a single ferromagnetic barrier on the surface of a three-dimensional topological insulator. In the presence of a magnetization component along the bias direction, a tunneling planar Hall conductance (TPHC), transverse to the applied bias, develops. Electrostatic control of the barrier enables a giant Hall angle, with the TPHC exceeding the longitudinal tunneling conductance. By changing the in-plane magnetization direction, it is possible to change the sign of both the longitudinal and transverse differential conductance without opening a gap in the topological surface state. The transport in a topological-insulator-ferromagnet junction can, thus, be drastically altered from a simple spin valve to an amplifier.

Entities:  

Year:  2016        PMID: 27792378     DOI: 10.1103/PhysRevLett.117.166806

Source DB:  PubMed          Journal:  Phys Rev Lett        ISSN: 0031-9007            Impact factor:   9.161


  3 in total

1.  Direct comparison of current-induced spin polarization in topological insulator Bi2Se3 and InAs Rashba states.

Authors:  C H Li; O M J van 't Erve; S Rajput; L Li; B T Jonker
Journal:  Nat Commun       Date:  2016-11-17       Impact factor: 14.919

2.  Skyrmion electrical detection with the use of three-dimensional Topological Insulators/Ferromagnetic bilayers.

Authors:  Dimitrios Andrikopoulos; Bart Sorée
Journal:  Sci Rep       Date:  2017-12-19       Impact factor: 4.379

3.  Huge magnetoresistance in topological insulator spin-valves at room temperature.

Authors:  Peng Tseng; Jyun-Wei Chen; Wen-Jeng Hsueh
Journal:  Sci Rep       Date:  2021-06-03       Impact factor: 4.379

  3 in total

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