| Literature DB >> 27782054 |
Thomas C Wilkes1, Andrew J S McGonigle2,3, Tom D Pering4, Angus J Taggart5, Benjamin S White6, Robert G Bryant7, Jon R Willmott8.
Abstract
Here, we report, for what we believe to be the first time, on the modification of a low cost sensor, designed for the smartphone camera market, to develop an ultraviolet (UV) camera system. This was achieved via adaptation of Raspberry Pi cameras, which are based on back-illuminated complementary metal-oxide semiconductor (CMOS) sensors, and we demonstrated the utility of these devices for applications at wavelengths as low as 310 nm, by remotely sensing power station smokestack emissions in this spectral region. Given the very low cost of these units, ≈ USD 25, they are suitable for widespread proliferation in a variety of UV imaging applications, e.g., in atmospheric science, volcanology, forensics and surface smoothness measurements.Entities:
Keywords: Raspberry Pi; UV camera; UV imaging; low-cost camera; smartphone sensor technology; sulphur dioxide emissions
Year: 2016 PMID: 27782054 PMCID: PMC5087437 DOI: 10.3390/s16101649
Source DB: PubMed Journal: Sensors (Basel) ISSN: 1424-8220 Impact factor: 3.576
Figure 1A schematic (Centre) of the Bayer filter array and its positioning on the photodetector array. Also shown are microscope images of the PiCam sensor pre- (Left) and post- (Right) Bayer removal process.
Figure 2A profile image of the Raspberry Pi Camera Module (Right), and the modified system with custom built optics (Left). The custom design is bolted to the camera board using the pre-existing mount holes.
Figure 3Plots of average pixel signal (in digital number; DN) vs. shutter speed (ms) for a cropped region (800 × 600 pixels) of clear-sky images taken at 310 nm: (A) the 10-bit RAW image output shows a linear increase in DN with respect to shutter speed; (B) the 8-bit standard output JPEG image shows a non-linear response in all three of the red-green-blue (RGB) channels (Red-channel DNs are plotted here) in line with gamma correction. An error bar is inserted on one data point per exposure time, indicating the standard deviation of the pixel intensities in the cropped region; the bar heights are approximately the same for all points of equivalent shutter speed, and just one bar is displayed for clarity.
Figure 4(A) A cropped image of the Drax smokestack taken at 310 nm with a shutter speed of 300 ms. The initial image pixels are binned to generate a pixel resolution of 648 × 486, to reduce noise; dark image subtraction and mask corrections have been applied. (B) As in (A) but at 330 nm with a shutter speed of 40 ms. (C) The resulting calibrated SO2 image of Drax power station stack and plume showing the clear capacity of the system to resolve the plume emissions. (D) A cross-section of (C) showing gas concentrations along the row delineated by the red line. The background noise level can be clearly observed between pixels 300 to 350.
Figure 5Time series of SO2 flux from Drax power station for a 15 min acquisition period.