High performance FETs based on ZnO nanowires synthesized by low cost methods.

Single ZnO nanowires prepared by wet and dry methods are used as channels in high performance back-gated field effect transistors working in low power operation mode, with on-off ratios up to 105 and mobilities up to 167 cm2 V-1 s-1. The nanowires' properties, generated by the growth techniques, influence the parameters of the transistors, therefore a throughout comparison is made.