A solution processed nanostructured p-type NiO electrode for efficient inverted perovskite solar cells.

Here we report a solution processed nanostructured NiO as a hole transport layer (HTL) for efficient inverted MAPb(I1-xBrx)3 (x = 0.3) perovskite solar cells (PSCs). The best performing p-i-n PSC exhibits 15.35% power conversion efficiency with a current density (JSC) of 19.85 mA cm-2, an open circuit voltage (VOC) of 1.056 V and a fill factor (FF) of 0.73. The developed method is simple and cost effective.