Literature DB >> 27749833

A dressed spin qubit in silicon.

Arne Laucht1, Rachpon Kalra1, Stephanie Simmons1, Juan P Dehollain1, Juha T Muhonen1, Fahd A Mohiyaddin1, Solomon Freer1, Fay E Hudson1, Kohei M Itoh2, David N Jamieson3, Jeffrey C McCallum3, Andrew S Dzurak1, A Morello1.   

Abstract

Coherent dressing of a quantum two-level system provides access to a new quantum system with improved properties-a different and easily tunable level splitting, faster control and longer coherence times. In our work we investigate the properties of the dressed, donor-bound electron spin in silicon, and assess its potential as a quantum bit in scalable architectures. The two dressed spin-polariton levels constitute a quantum bit that can be coherently driven with an oscillating magnetic field, an oscillating electric field, frequency modulation of the driving field or a simple detuning pulse. We measure coherence times of and , one order of magnitude longer than those of the undressed spin. Furthermore, the use of the dressed states enables coherent coupling of the solid-state spins to electric fields and mechanical oscillations.

Entities:  

Year:  2016        PMID: 27749833     DOI: 10.1038/nnano.2016.178

Source DB:  PubMed          Journal:  Nat Nanotechnol        ISSN: 1748-3387            Impact factor:   39.213


  30 in total

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