| Literature DB >> 27749272 |
Guodong Wang1, Baolai Liang, Bor-Chau Juang, Aparna Das, Mukul C Debnath, Diana L Huffaker, Yuriy I Mazur, Morgan E Ware, Gregory J Salamo.
Abstract
The optical properties of In0.3Ga0.7As/GaAs surface quantum dots (SQDs) and buried QDs (BQDs) are investigated by photoluminescence (PL) measurements. The integrated PL intensity, linewidth, and lifetime of SQDs are significantly different from the BQDs both at room temperature and at low temperature. The differences in PL response, measured at both steady state and in transient, are attributed to carrier transfer between the surface states and the SQDs.Year: 2016 PMID： 27749272 DOI： 10.1088/0957-4484/27/46/465701
Source DB: PubMed Journal: Nanotechnology ISSN： 0957-4484 Impact factor: 3.874