Literature DB >> 27748975

Graphene-β-Ga2 O3 Heterojunction for Highly Sensitive Deep UV Photodetector Application.

Wei-Yu Kong1, Guo-An Wu1, Kui-Yuan Wang1, Teng-Fei Zhang1, Yi-Feng Zou1, Dan-Dan Wang1, Lin-Bao Luo1.   

Abstract

A deep UV light photodetector is assembled by coating multilayer graphene on beta-gallium oxide (β-Ga2 O3 ) wafer. Optoelectronic analysis reveals that the heterojunction device is virtually blind to light illumination with wavelength longer than 280 nm, but is highly sensitive to 254 nm light with very good stability and reproducibility.
© 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Entities:  

Keywords:  Schottky junction; deep UV light photodetector; graphene; responsivity; wide bandgap

Year:  2016        PMID： 27748975     DOI： 10.1002/adma.201604049

Source DB:  PubMed          Journal:  Adv Mater        ISSN： 0935-9648            Impact factor:   30.849


  14 in total

Review 1.  Zinc oxide ultraviolet photodetectors: rapid progress from conventional to self-powered photodetectors.

Authors:  Buddha Deka Boruah
Journal:  Nanoscale Adv       Date:  2019-04-02

Review 2.  2D Materials for Efficient Photodetection: Overview, Mechanisms, Performance and UV-IR Range Applications.

Authors:  Maria Malik; Muhammad Aamir Iqbal; Jeong Ryeol Choi; Phuong V Pham
Journal:  Front Chem       Date:  2022-05-20       Impact factor: 5.545

3.  Stability-Enhanced Resistive Random-Access Memory via Stacked In x Ga1-x O by the RF Sputtering Method.

Authors:  Wei-Lun Huang; Yong-Zhe Lin; Sheng-Po Chang; Wei-Chih Lai; Shoou-Jinn Chang
Journal:  ACS Omega       Date:  2021-04-13

Review 4.  Graphene-Based Semiconductor Heterostructures for Photodetectors.

Authors:  Dong Hee Shin; Suk-Ho Choi
Journal:  Micromachines (Basel)       Date:  2018-07-13       Impact factor: 2.891

5.  Arrayed CdTeMicrodots and Their Enhanced Photodetectivity via Piezo-Phototronic Effect.

Authors:  Dong Jin Lee; G Mohan Kumar; P Ilanchezhiyan; Fu Xiao; Sh U Yuldashev; Yong Deuk Woo; Deuk Young Kim; Tae Won Kang
Journal:  Nanomaterials (Basel)       Date:  2019-02-01       Impact factor: 5.076

6.  Memory phototransistors based on exponential-association photoelectric conversion law.

Authors:  Zhibin Shao; Tianhao Jiang; Xiujuan Zhang; Xiaohong Zhang; Xiaofeng Wu; Feifei Xia; Shiyun Xiong; Shuit-Tong Lee; Jiansheng Jie
Journal:  Nat Commun       Date:  2019-03-20       Impact factor: 14.919

7.  Multilayered PdSe2/Perovskite Schottky Junction for Fast, Self-Powered, Polarization-Sensitive, Broadband Photodetectors, and Image Sensor Application.

Authors:  Long-Hui Zeng; Qing-Ming Chen; Zhi-Xiang Zhang; Di Wu; Huiyu Yuan; Yan-Yong Li; Wayesh Qarony; Shu Ping Lau; Lin-Bao Luo; Yuen Hong Tsang
Journal:  Adv Sci (Weinh)       Date:  2019-08-07       Impact factor: 16.806

8.  High-Performance Self-Powered Ultraviolet Photodetector Based on Nano-Porous GaN and CoPc p-n Vertical Heterojunction.

Authors:  Yan Xiao; Lin Liu; Zhi-Hao Ma; Bo Meng; Su-Jie Qin; Ge-Bo Pan
Journal:  Nanomaterials (Basel)       Date:  2019-08-26       Impact factor: 5.076

9.  Photo-Driven Ion Transport for a Photodetector Based on an Asymmetric Carbon Nitride Nanotube Membrane.

Authors:  Kai Xiao; Bin Tu; Lu Chen; Tobias Heil; Liping Wen; Lei Jiang; Markus Antonietti
Journal:  Angew Chem Int Ed Engl       Date:  2019-08-02       Impact factor: 15.336

10.  Artificial visual systems enabled by quasi-two-dimensional electron gases in oxide superlattice nanowires.

Authors:  You Meng; Fangzhou Li; Changyong Lan; Xiuming Bu; Xiaolin Kang; Renjie Wei; SenPo Yip; Dapan Li; Fei Wang; Tsunaki Takahashi; Takuro Hosomi; Kazuki Nagashima; Takeshi Yanagida; Johnny C Ho
Journal:  Sci Adv       Date:  2020-11-11       Impact factor: 14.136
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