Literature DB >> 27748526

Eliminating Negative-SET Behavior by Suppressing Nanofilament Overgrowth in Cation-Based Memory.

Sen Liu1,2,3, Nianduan Lu1,3, Xiaolong Zhao1,3, Hui Xu2, Writam Banerjee1,3, Hangbing Lv1,3, Shibing Long1,3, Qingjiang Li2, Qi Liu1,3, Ming Liu1,3.   

Abstract

Negative-SET behavior is observed in various cation-based memories, which degrades the device reliability. Transmission electron microscopy results demonstrate the behavior is caused by the overgrowth of the conductive filament (CF) into the Pt electrode. The CF overgrowth phenomenon is suppressed and the negative-SET behavior is eliminated by inserting an impermeable graphene layer. The graphene-based devices show high reliability and satisfying performance.
© 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Entities:  

Keywords:  cation-based memory; graphene; impenetrability; nanofilaments; resistive switching behavior

Year:  2016        PMID： 27748526     DOI： 10.1002/adma.201603293

Source DB:  PubMed          Journal:  Adv Mater        ISSN： 0935-9648            Impact factor:   30.849


  5 in total

Review 1.  Decade of 2D-materials-based RRAM devices: a review.

Authors:  Muhammad Muqeet Rehman; Hafiz Mohammad Mutee Ur Rehman; Jahan Zeb Gul; Woo Young Kim; Khasan S Karimov; Nisar Ahmed
Journal:  Sci Technol Adv Mater       Date:  2020-03-18       Impact factor: 8.090

2.  Analysis of the Negative-SET Behaviors in Cu/ZrO2/Pt Devices.

Authors:  Sen Liu; Xiaolong Zhao; Qingjiang Li; Nan Li; Wei Wang; Qi Liu; Hui Xu
Journal:  Nanoscale Res Lett       Date:  2016-12-07       Impact factor: 4.703

3.  Reflow Soldering Capability Improvement by Utilizing TaN Interfacial Layer in 1Mbit RRAM Chip.

Authors:  Peng Yuan; Danian Dong; Xu Zheng; Guozhong Xing; Xiaoxin Xu
Journal:  Micromachines (Basel)       Date:  2022-03-31       Impact factor: 2.891

4.  Transformation of threshold volatile switching to quantum point contact originated nonvolatile switching in graphene interface controlled memory devices.

Authors:  Zuheng Wu; Xiaolong Zhao; Yang Yang; Wei Wang; Xumeng Zhang; Rui Wang; Rongrong Cao; Qi Liu; Writam Banerjee
Journal:  Nanoscale Adv       Date:  2019-08-06

5.  Customized binary and multi-level HfO2-x-based memristors tuned by oxidation conditions.

Authors:  Weifan He; Huajun Sun; Yaxiong Zhou; Ke Lu; Kanhao Xue; Xiangshui Miao
Journal:  Sci Rep       Date:  2017-08-30       Impact factor: 4.379
  5 in total

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