| Literature DB >> 27726184 |
Yoichi Tanabe1, Yoshikazu Ito2, Katsuaki Sugawara2, Daisuke Hojo2, Mikito Koshino1, Takeshi Fujita2, Tsutomu Aida3, Xiandong Xu2, Khuong Kim Huynh2, Hidekazu Shimotani1, Tadafumi Adschiri2, Takashi Takahashi1,2, Katsumi Tanigaki1,2, Hideo Aoki4, Mingwei Chen2,5,6.
Abstract
Nanoporous graphene- based electric-double-layer transistors (EDLTs) are successfully fabricated. Transport measurements of the EDLTs demonstrate that the ambipolar electronic states of massless Dirac fermions with a high carrier mobility are well preserved in 3D nanoporous graphene along with anomalous nonlinear Hall resistance and exceptional transistor on/off ratio. This study may open a new avenue for device applications of graphene.Entities:
Keywords: 3D nanoporous materials; CVD growth; electric transport; field effect transistors; graphene
Year: 2016 PMID: 27726184 DOI: 10.1002/adma.201601067
Source DB: PubMed Journal: Adv Mater ISSN: 0935-9648 Impact factor: 30.849