Literature DB >> 27717242

Templated Solid-State Dewetting of Thin Silicon Films.

Meher Naffouti1,2, Thomas David1, Abdelmalek Benkouider1, Luc Favre1, Anne Delobbe3, Antoine Ronda1, Isabelle Berbezier1, Marco Abbarchi1.   

Abstract

Thin film dewetting can be efficiently exploited for the implementation of functionalized surfaces over very large scales. Although the formation of sub-micrometer sized crystals via solid-state dewetting represents a viable method for the fabrication of quantum dots and optical meta-surfaces, there are several limitations related to the intrinsic features of dewetting in a crystalline medium. Disordered spatial organization, size, and shape fluctuations are relevant issues not properly addressed so far. This study reports on the deterministic nucleation and precise positioning of Si- and SiGe-based nanocrystals by templated solid-state dewetting of thin silicon films. The dewetting dynamics is guided by pattern size and shape taking full control over number, size, shape, and relative position of the particles (islands dimensions and relative distances are in the hundreds nm range and fluctuate ≈11% for the volumes and ≈5% for the positioning).
© 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Entities:  

Keywords:  SiGe alloys; organization; patterning; silicon on insulator; solid-state dewetting, nanocrystals

Year:  2016        PMID: 27717242     DOI: 10.1002/smll.201601744

Source DB:  PubMed          Journal:  Small        ISSN: 1613-6810            Impact factor:   13.281


  1 in total

1.  Templated dewetting of single-crystal sub-millimeter-long nanowires and on-chip silicon circuits.

Authors:  Monica Bollani; Marco Salvalaglio; Abdennacer Benali; Mohammed Bouabdellaoui; Meher Naffouti; Mario Lodari; Stefano Di Corato; Alexey Fedorov; Axel Voigt; Ibtissem Fraj; Luc Favre; Jean Benoit Claude; David Grosso; Giuseppe Nicotra; Antonio Mio; Antoine Ronda; Isabelle Berbezier; Marco Abbarchi
Journal:  Nat Commun       Date:  2019-12-10       Impact factor: 14.919

  1 in total

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