Literature DB >> 27717010

Reconfigurable Nonvolatile Logic Operations in Resistance Switching Crossbar Array for Large-Scale Circuits.

Peng Huang1, Jinfeng Kang1, Yudi Zhao1, Sijie Chen1, Runze Han1, Zheng Zhou1, Zhe Chen1, Wenjia Ma1, Mu Li1, Lifeng Liu1, Xiaoyan Liu1.   

Abstract

Resistance switching (RS) devices have potential to offer computing and memory function. A new computer unit is built of RS array, where processing and storing of information occur on same devices. Resistance states stored in devices located in arbitrary positions of RS array can be performed various nonvolatile logic operations. Logic functions can be reconfigured by altering trigger signals.
© 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Entities:  

Keywords:  memristors; nonvolatile logic; resistance switching; von Neumann bottleneck

Year:  2016        PMID： 27717010     DOI： 10.1002/adma.201602418

Source DB:  PubMed          Journal:  Adv Mater        ISSN： 0935-9648            Impact factor:   30.849


  10 in total

1.  Demonstration of Logic Operations in High-Performance RRAM Crossbar Array Fabricated by Atomic Layer Deposition Technique.

Authors:  Runze Han; Peng Huang; Yudi Zhao; Zhe Chen; Lifeng Liu; Xiaoyan Liu; Jinfeng Kang
Journal:  Nanoscale Res Lett       Date:  2017-01-13       Impact factor: 4.703

2.  The Characteristics of Binary Spike-Time-Dependent Plasticity in HfO2-Based RRAM and Applications for Pattern Recognition.

Authors:  Zheng Zhou; Chen Liu; Wensheng Shen; Zhen Dong; Zhe Chen; Peng Huang; Lifeng Liu; Xiaoyan Liu; Jinfeng Kang
Journal:  Nanoscale Res Lett       Date:  2017-04-04       Impact factor: 4.703

3.  Binary Addition in Resistance Switching Memory Array by Sensing Majority.

Authors:  John Reuben
Journal:  Micromachines (Basel)       Date:  2020-05-14       Impact factor: 2.891

4.  Graphene Oxide: Graphene Quantum Dot Nanocomposite for Better Memristic Switching Behaviors.

Authors:  Lei Li
Journal:  Nanomaterials (Basel)       Date:  2020-07-24       Impact factor: 5.076

5.  Negative Differential Resistance Effect in Ru-Based RRAM Device Fabricated by Atomic Layer Deposition.

Authors:  Yulin Feng; Peng Huang; Zheng Zhou; Xiangxiang Ding; Lifeng Liu; Xiaoyan Liu; Jinfeng Kang
Journal:  Nanoscale Res Lett       Date:  2019-03-11       Impact factor: 4.703

6.  Atomic Layer-Deposited HfAlOx-Based RRAM with Low Operating Voltage for Computing In-Memory Applications.

Authors:  Zhen-Yu He; Tian-Yu Wang; Lin Chen; Hao Zhu; Qing-Qing Sun; Shi-Jin Ding; David Wei Zhang
Journal:  Nanoscale Res Lett       Date:  2019-02-07       Impact factor: 4.703

7.  All WSe2 1T1R resistive RAM cell for future monolithic 3D embedded memory integration.

Authors:  Maheswari Sivan; Yida Li; Hasita Veluri; Yunshan Zhao; Baoshan Tang; Xinghua Wang; Evgeny Zamburg; Jin Feng Leong; Jessie Xuhua Niu; Umesh Chand; Aaron Voon-Yew Thean
Journal:  Nat Commun       Date:  2019-11-15       Impact factor: 14.919

8.  Ternary Logic with Stateful Neural Networks Using a Bilayered TaOX -Based Memristor Exhibiting Ternary States.

Authors:  Young Seok Kim; Jangho An; Jae Bum Jeon; Myeong Won Son; Seoil Son; Woojoon Park; Younghyun Lee; Juseong Park; Geun Young Kim; Gwangmin Kim; Hanchan Song; Kyung Min Kim
Journal:  Adv Sci (Weinh)       Date:  2021-12-16       Impact factor: 16.806

9.  Reconfigurable and Efficient Implementation of 16 Boolean Logics and Full-Adder Functions with Memristor Crossbar for Beyond von Neumann In-Memory Computing.

Authors:  Yujie Song; Xingsheng Wang; Qiwen Wu; Fan Yang; Chengxu Wang; Meiqing Wang; Xiangshui Miao
Journal:  Adv Sci (Weinh)       Date:  2022-03-27       Impact factor: 17.521

10.  Electrically-generated memristor based on inkjet printed silver nanoparticles.

Authors:  Kyung Jean Yoon; Jin-Woo Han; Dong-Il Moon; Myeong Lok Seol; M Meyyappan; Han Joon Kim; Cheol Seong Hwang
Journal:  Nanoscale Adv       Date:  2019-06-17
  10 in total

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