Literature DB >> 27714050

Nonassociative learning implementation by a single memristor-based multi-terminal synaptic device.

Xue Yang1, Yichen Fang, Zhizhen Yu, Zongwei Wang, Teng Zhang, Minhui Yin, Min Lin, Yuchao Yang, Yimao Cai, Ru Huang.   

Abstract

Animals' survival is dependent on their abilities to adapt to the changing environment by adjusting their behaviours, which is related to the ubiquitous learning behaviour, nonassociative learning. Thus mimicking the indispensable learning behaviour in organisms based on electronic devices is vital to better achieve artificial neural networks and neuromorphic computing. Here a three terminal device consisting of an oxide-based memristor and a NMOS transistor is proposed. The memristor with gradual conductance tuning inherently functions as the synapse between sensor neurons and motor neurons and presents adjustable synaptic plasticity, while the NMOS transistor attached to the memristor is utilized to mimic the modulatory effect of the neuromodulator released by inter neurons. Such a memristor-based multi-terminal device allows the practical implementation of significant nonassociative learning based on a single electronic device. In this study, the experience-induced modification behaviour, both habituation and sensitization, was successfully achieved. The dependence of the nonassociative behavioural response on the strength and interval of presented stimuli was also discussed. The implementation of nonassociative learning offers feasible and experimental advantages for further study on neuromorphic systems based on electronic devices.

Entities:  

Year:  2016        PMID: 27714050     DOI: 10.1039/c6nr04142f

Source DB:  PubMed          Journal:  Nanoscale        ISSN: 2040-3364            Impact factor:   7.790


  4 in total

1.  Artificial Shape Perception Retina Network Based on Tunable Memristive Neurons.

Authors:  Lin Bao; Jian Kang; Yichen Fang; Zhizhen Yu; Zongwei Wang; Yuchao Yang; Yimao Cai; Ru Huang
Journal:  Sci Rep       Date:  2018-09-13       Impact factor: 4.379

2.  Light Driven Active Transition of Switching Modes in Homogeneous Oxides/Graphene Heterostructure.

Authors:  Xiaoli Chen; Kelin Zeng; Xin Zhu; Guanglong Ding; Ting Zou; Chen Zhang; Kui Zhou; Ye Zhou; Su-Ting Han
Journal:  Adv Sci (Weinh)       Date:  2019-04-12       Impact factor: 16.806

3.  Gate Tuning of Synaptic Functions Based on Oxygen Vacancy Distribution Control in Four-Terminal TiO2-x Memristive Devices.

Authors:  Zenya Nagata; Takuma Shimizu; Tsuyoshi Isaka; Tetsuya Tohei; Nobuyuki Ikarashi; Akira Sakai
Journal:  Sci Rep       Date:  2019-07-10       Impact factor: 4.379

4.  Customized binary and multi-level HfO2-x-based memristors tuned by oxidation conditions.

Authors:  Weifan He; Huajun Sun; Yaxiong Zhou; Ke Lu; Kanhao Xue; Xiangshui Miao
Journal:  Sci Rep       Date:  2017-08-30       Impact factor: 4.379

  4 in total

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