Literature DB >> 27704850

Electromechanical Properties and Spontaneous Response of the Current in InAsP Nanowires.

Jong Hoon Lee1, Min Wook Pin1,2, Su Ji Choi1,3, Min Hyeok Jo4, Jae Cheol Shin4, Seong-Gu Hong1, Seung Mi Lee1, Boklae Cho1, Sang Jung Ahn1,2, Nam Woong Song1, Seong-Hoon Yi3, Young Heon Kim1,2.   

Abstract

The electromechanical properties of ternary InAsP nanowires (NWs) were investigated by applying a uniaxial tensile strain in a transmission electron microscope (TEM). The electromechanical properties in our examined InAsP NWs were governed by the piezoresistive effect. We found that the electronic transport of the InAsP NWs is dominated by space-charge-limited transport, with a I ∞ V2 relation. Upon increasing the tensile strain, the electrical current in the NWs increases linearly, and the piezoresistance gradually decreases nonlinearly. By analyzing the space-charge-limited I-V curves, we show that the electromechanical response is due to a mobility that increases with strain. Finally, we use dynamical measurements to establish an upper limit on the time scale for the electromechanical response.

Keywords:  Indium arsenic phosphide (InAsP) nanowire; piezoresistance; transmission electron microscopy (TEM)

Year:  2016        PMID: 27704850     DOI: 10.1021/acs.nanolett.6b02155

Source DB:  PubMed          Journal:  Nano Lett        ISSN: 1530-6984            Impact factor:   11.189


  4 in total

1.  Tuning Hole Mobility of Individual p-Doped GaAs Nanowires by Uniaxial Tensile Stress.

Authors:  Lunjie Zeng; Jonatan Holmér; Rohan Dhall; Christoph Gammer; Andrew M Minor; Eva Olsson
Journal:  Nano Lett       Date:  2021-04-29       Impact factor: 11.189

2.  Piezoresistivity of InAsP Nanowires: Role of Crystal Phases and Phosphorus Atoms in Strain-Induced Channel Conductances.

Authors:  In Kim; Han Seul Kim; Hoon Ryu
Journal:  Molecules       Date:  2019-09-06       Impact factor: 4.411

3.  Long-Term Stability and Optoelectronic Performance Enhancement of InAsP Nanowires with an Ultrathin InP Passivation Layer.

Authors:  LuLu Chen; Stephanie O Adeyemo; H Aruni Fonseka; Huiyun Liu; Srabani Kar; Hui Yang; Anton Velichko; David J Mowbray; Zhiyuan Cheng; Ana M Sanchez; Hannah J Joyce; Yunyan Zhang
Journal:  Nano Lett       Date:  2022-04-14       Impact factor: 11.189

4.  Correlation between Electrical Transport and Nanoscale Strain in InAs/In0.6Ga0.4As Core-Shell Nanowires.

Authors:  Lunjie Zeng; Christoph Gammer; Burak Ozdol; Thomas Nordqvist; Jesper Nygård; Peter Krogstrup; Andrew M Minor; Wolfgang Jäger; Eva Olsson
Journal:  Nano Lett       Date:  2018-07-30       Impact factor: 11.189

  4 in total

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