| Literature DB >> 27704850 |
Jong Hoon Lee1, Min Wook Pin1,2, Su Ji Choi1,3, Min Hyeok Jo4, Jae Cheol Shin4, Seong-Gu Hong1, Seung Mi Lee1, Boklae Cho1, Sang Jung Ahn1,2, Nam Woong Song1, Seong-Hoon Yi3, Young Heon Kim1,2.
Abstract
The electromechanical properties of ternary InAsP nanowires (NWs) were investigated by applying a uniaxial tensile strain in a transmission electron microscope (TEM). The electromechanical properties in our examined InAsP NWs were governed by the piezoresistive effect. We found that the electronic transport of the InAsP NWs is dominated by space-charge-limited transport, with a I ∞ V2 relation. Upon increasing the tensile strain, the electrical current in the NWs increases linearly, and the piezoresistance gradually decreases nonlinearly. By analyzing the space-charge-limited I-V curves, we show that the electromechanical response is due to a mobility that increases with strain. Finally, we use dynamical measurements to establish an upper limit on the time scale for the electromechanical response.Keywords: Indium arsenic phosphide (InAsP) nanowire; piezoresistance; transmission electron microscopy (TEM)
Year: 2016 PMID: 27704850 DOI: 10.1021/acs.nanolett.6b02155
Source DB: PubMed Journal: Nano Lett ISSN: 1530-6984 Impact factor: 11.189