| Literature DB >> 27698413 |
Jialin Zhao1,2, Meng Wang1,2, Hui Li3, Xuefu Zhang1,2, Lixing You1,2, Shan Qiao1,2, Bo Gao1,2, Xiaoming Xie1,2, Mianheng Jiang1,2,4.
Abstract
We have developed a technique to tune the carrier density in graphene using a lithium-ion-based solid electrolyte. We demonstrate that the solid electrolyte can be used as both a substrate to support graphene and a back gate. It can induce a change in the carrier density as large as 1 × 1014 cm-2, which is much larger than that induced with oxide-film dielectrics, and it is comparable with that induced by liquid electrolytes. Gate modulation of the carrier density is still visible at 150 K, which is lower than the glass transition temperature of most liquid gating electrolytes.Entities:
Year: 2016 PMID: 27698413 PMCID: PMC5048137 DOI: 10.1038/srep34816
Source DB: PubMed Journal: Sci Rep ISSN: 2045-2322 Impact factor: 4.379
Figure 1(a) Schematic diagram of the wet transfer of single-layer graphene from Cu substrate to LICGC substrate. (b) Schematic diagram of patterning metal electrodes on few-layer graphene exfoliated onto the LICGC substrate.
Figure 2(a) The AFM image of a LICGC substrate, the average roughness is approximately 1.1 nm. (b) The bipolar behavior of a typical single-layer graphene sample measured at room temperature. Inset: schematic view of the device geometry.
Figure 3The resistance (a), Hall coefficient (b) and carrier density (c) of a single-layer graphene sample as a function of the back gate voltage measured at room temperature. (d–f) Similar measurement results of a micrometer-sized few-layer graphene sample.
Figure 4The gate dependence of five single-layer graphene samples; each measured at a specific temperature.
Li ions are displaceable even at a temperature as low as 150 K.