Literature DB >> 27690190

Ferroelectric-Driven Performance Enhancement of Graphene Field-Effect Transistors Based on Vertical Tunneling Heterostructures.

Shuoguo Yuan1, Zhibin Yang1,2, Chao Xie1, Feng Yan1, Jiyan Dai1, Shu Ping Lau1, Helen L W Chan1, Jianhua Hao1,2.   

Abstract

A vertical graphene heterostructure field-effect transistor (VGHFET) using an ultrathin ferroelectric film as a tunnel barrier is developed. The heterostructure is capable of providing new degrees of tunability and functionality via coupling between the ferroelectricity and the tunnel current of the VGHFET, which results in a high-performance device. The results pave the way for developing novel atomic-scale 2D heterostructures and devices.
© 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Entities:  

Keywords:  2D materials; ferroelectric thin films; field-effect transistors; graphene; pulsed laser deposition

Year:  2016        PMID： 27690190     DOI： 10.1002/adma.201601489

Source DB:  PubMed          Journal:  Adv Mater        ISSN： 0935-9648            Impact factor:   30.849


  4 in total

1.  Room-temperature ferroelectricity in MoTe2 down to the atomic monolayer limit.

Authors:  Shuoguo Yuan; Xin Luo; Hung Lit Chan; Chengcheng Xiao; Yawei Dai; Maohai Xie; Jianhua Hao
Journal:  Nat Commun       Date:  2019-04-16       Impact factor: 14.919

2.  Multi-Level Resistive Switching in SnSe/SrTiO3 Heterostructure Based Memristor Device.

Authors:  Tsz-Lung Ho; Keda Ding; Nikolay Lyapunov; Chun-Hung Suen; Lok-Wing Wong; Jiong Zhao; Ming Yang; Xiaoyuan Zhou; Ji-Yan Dai
Journal:  Nanomaterials (Basel)       Date:  2022-06-21       Impact factor: 5.719

3.  Investigation of multilevel data storage in silicon-based polycrystalline ferroelectric tunnel junction.

Authors:  Pengfei Hou; Jinbin Wang; Xiangli Zhong
Journal:  Sci Rep       Date:  2017-07-03       Impact factor: 4.379

Review 4.  Miniaturization of CMOS.

Authors:  Henry H Radamson; Xiaobin He; Qingzhu Zhang; Jinbiao Liu; Hushan Cui; Jinjuan Xiang; Zhenzhen Kong; Wenjuan Xiong; Junjie Li; Jianfeng Gao; Hong Yang; Shihai Gu; Xuewei Zhao; Yong Du; Jiahan Yu; Guilei Wang
Journal:  Micromachines (Basel)       Date:  2019-04-30       Impact factor: 2.891
  4 in total

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